Manufacturing process of flexible amorphous silicon solar cell

Abstract

The invention provides a technique for manufacturing a flexible amorphous silicon solar cell, wherein, a bought-in rolled transparent polyimide film with a thickness of 0.3 millimeter is used for coating according to the following technical steps: firstly, a roller which is rolled with the polyimide film is supported on a bearing bracket and a layer of ZnOx conductive film with an electricresistivity less than 10ohm-cm is generated through magnetron sputtering; secondly, the polyimide film roller which is plated with the ZnOx conductive film is taken out and sent into another single-chamber large-scale PECVD device, with an internal deposition temperature 210 DEG C; a p type amorphous silicon film, an i type amorphous silicon film and an n type amorphous silicon film are deposited by adoption of 13.5 MZ radio frequency as power and by utilization of the plasma reinforcement method; thirdly, the roller with is provided with the polyimide film is arranged inside a magnetron sputtering device which is specially used for depositing an aluminum layer; a layer of aluminum is deposited by adoption of the direct-current magnetron sputtering method; n type electrodes are ultrasonically welded by adoption of aluminum and p type electrodes are packaged by adoption of the low-temperature silver-aluminum grouting method. The technique has the advantages of simple technique, low cost and suitability of being mass-produced.

Description

technical field [0001] The invention relates to a manufacturing process of a rollable thin-film amorphous silicon solar cell capable of mass production. Background technique [0002] The production technology of flexible amorphous silicon solar cells consists of 6 layers of semiconductor and metal films with different films. In the amorphous silicon thin film battery composed of three layers of amorphous silicon thin films of different conductivity types 3, 4, and 5, since 3 and 5 are semiconductor materials of two different conductivity types, the intrinsic layer 4 is formed between the two layers. A high electric field region with an intensity > 104V / cm is a depletion region when there is no electricity or other excited states, that is, there are no excess carriers except the intrinsic carriers. When photons enter 4 through layers 1, 2, and 3, a large number of excess carriers (electrons and holes) are generated. These electrons and holes migrate under the drive of the...

AI Technical Summary

Problems solved by technology

[0003] At present, no method has been found to manufacture flexible amorphous silicon solar cells with the simplest process.

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