Method for preparing multi-layer isolation layer and YBCO coating conductor on metal base band
A metal baseband and coated conductor technology, applied in the usage of superconductor elements, metal material coating process, cable/conductor manufacturing, etc.
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Embodiment 1
[0074] Connect the front and rear ends of the metal base tape with cubic texture to the leader tape and clean it. Wrap the cleaned metal base tape and leader tape on the unwinding and take-up reels, place them in a vacuum chamber, and place the leader part in the deposition area. Vacuum until the back vacuum of the cavity is less than or equal to 5×10 -4 Pa; heat the metal substrate to 500°C, and after reaching the required temperature for 30 minutes, fill the chamber with argon to a pressure of 1×10-1 Pa.
[0075] Taking Y metal as the sputtering target, adopting the DC magnetron sputtering deposition method, the sputtering power is 320W, the target base distance is 120mm, and the pre-sputtering is started. After 20 minutes of pre-sputtering, water vapor was introduced to control the water content in the deposition chamber at 1×10 -3 Pa, and adjust the pressure in the deposition chamber to 1Pa, and start the formal sputtering deposition. After the official sputtering depos...
Embodiment 2
[0095] Connect the front and rear ends of the metal base tape with cubic texture to the leader tape and clean it. Wrap the cleaned metal base tape and leader tape on the unwinding and take-up reels, place them in a vacuum chamber, and place the leader part in the deposition area. Vacuum until the back vacuum of the cavity is less than or equal to 5×10 -4 Pa; heat the metal substrate to 700°C, and after reaching the required temperature for 30 minutes, fill the chamber with argon to a pressure of 5×10 -1 Pa.
[0096] Taking Y metal as the sputtering target, adopting DC magnetron sputtering deposition method, sputtering power 350W, target base distance 60mm, start pre-sputtering. After 20 minutes of pre-sputtering, water vapor was introduced to control the water content in the deposition chamber at 8×10 -3 Pa, and adjust the pressure in the deposition chamber to 2Pa, and start the formal sputtering deposition. After the official sputtering deposition starts, the metal base t...
Embodiment 3
[0106] Connect the front and rear ends of the metal base tape with cubic texture to the leader tape and clean it. Wrap the cleaned metal base tape and leader tape on the unwinding and take-up reels, place them in a vacuum chamber, and place the leader part in the deposition area. Vacuum until the back vacuum of the cavity is less than or equal to 5×10 -4 Pa; heat the metal substrate to 800°C, and after reaching the required temperature for 30 minutes, fill the chamber with argon to a pressure of 8×10 -1 Pa.
[0107] With Y metal as the sputtering target, the DC magnetron sputtering deposition method is adopted, the sputtering power is 350W, the target base distance is 80mm, and the pre-sputtering is started. After 20 minutes of pre-sputtering, water vapor was introduced to control the water content in the deposition chamber at 7×10 -3 Pa, and adjust the pressure in the deposition chamber to 5Pa, and start the formal sputtering deposition. After the official sputtering depo...
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Abstract
Description
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Application Information
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