Low temperature Au-In-Au bonding method for III-V family compounds
An au-in-au, low-temperature bonding technology, which is applied in the field of semiconductor optoelectronic device technology, can solve problems that are rarely reported, and achieve the effects of improving reflectivity, improving the performance of optoelectronic devices, and improving the thermoelectric performance of devices
Inactive Publication Date: 2011-04-20
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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[0004] There have been some researches on metal bonding technology in the world, and there are also some literature or patent reports, but so far, there are few reports on low-temperature Au-In-Au metal bonding
And there are few related patents
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[0029] The low-temperature Au-In-Au metal bonding technology described in the present invention is used to make a long-wavelength vertical cavity surface emitting laser (VCSELs) structure.
[0030] 1. The InP-based half-cavity VCSEL structure sample is grown by gas source molecular beam epitaxy (GSMBE), and the Si substrate is prepared accordingly;
[0031] 2. Carry out low-temperature Au-In-Au metal bonding according to the specific implementation steps (1-3) described in the summary of the invention, the bonding process is as follows figure 1 and figure 2 shown; figure 2 The two 5-20nm are the bonding interface, and the upper and lower Si substrates play a protective role during bonding.
[0032] 3. Result analysis: the bonded sample structure is as follows: figure 2 shown. The bonding is complete, there are few voids in the bonding area, the surface after peeling off the InP substrate is smooth, there are few defects, and there are basically no corrosion pits, and th...
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Abstract
The invention provides a low temperature Au-In-Au metallic bonding method for manufacturing III-V group of compound semiconductor optoelectronic device structure. The invention is characterized in that the metallic bonding process comprises the following steps of evaporating metal films, bonding the device structural metal to the Si substrate at low temperature and eliminating the epitaxial wafersubstrate by corrosion. The key points of the method are the appropriate applied pressure during the proper metal films evaporation and low temperature bonding process, annealing temperature and time. The metal films evaporated in the technology are in favor of improving the optical and thermal properties of the optoelectronic devices, at the same time integrating the advantages of III-V group InP or GaAs compound semiconductor materials and Si materials and realizing substrate back off and laying a foundation for the later process of device preparation. The invention is characterized in thatthe low temperature bonding is reliable and the bonding process can not worsen the original optical and thermal properties of the device structure after bonding, thus being in favor of the preparation of the device structure. The invention is expected to be widely applied in preparing metal waveguide and other semiconductor optoelectronic devices.
Description
technical field [0001] The invention provides a low-temperature Au-In-Au metal bonding method suitable for making III-V compound semiconductor optoelectronic device structures, and belongs to the technical field of semiconductor optoelectronic device technology. Background technique [0002] With the development of III-V compound semiconductor optoelectronic devices, InP-based and GaAs-based optoelectronic device structures can be epitaxially grown by molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), etc. However, the epitaxially grown InP The thermal characteristics of GaAs-based or GaAs-based are not good, which affects the device characteristics. At room temperature, the thermal conductivity of undoped InP is 0.067w cm -1 k -1 , the resistivity is 109Ω·cm, and the thermal conductivity of undoped GaAs is 0.044w·cm -1 k -1 , the resistivity is 109Ω·cm, and the thermal conductivity of InP-based and GaAs-based ternary or quaternary compounds i...
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IPC IPC(8): H01L33/00H01S5/02H01S5/022H01S5/028
Inventor 谢正生吴惠桢劳燕锋刘成曹萌黄占超
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI