Gallium nitride substrate and gallium nitride film deposition method

A technology of gallium nitride substrate and gallium nitride film, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve the problem of gallium nitride crystals being fragile, increasing the incidence of cracks, defects, etc. problem, to achieve the effect of reducing the incidence of cracking

Inactive Publication Date: 2008-11-26
SUMITOMO ELECTRIC IND LTD
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  • Abstract
  • Description
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Problems solved by technology

[0003] Increasing the level of n-dopant concentration in order to increase the carrier concentration, however, tends to make the GaN crystal more brittle as in the just-mentioned GaN substrate
As a result, the incidence of cracking is detrimentally increased in gallium nitride substrate fabrication operations as well as in epitaxial growth and device fabrication processes using GaN substrates
Any cracks in the GaN substrate make it defective

Method used

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  • Gallium nitride substrate and gallium nitride film deposition method
  • Gallium nitride substrate and gallium nitride film deposition method
  • Gallium nitride substrate and gallium nitride film deposition method

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0084] Although the present invention is more specifically described below based on examples, the present invention is not limited to the following examples.

[0085] 6 is a table showing test results when GaN layers were formed in Reference Examples 1-1 and 1-2 and Examples 1-1 to 2-4.

[0086] Reference example 1-1

[0087] First, at the growth temperature (T 0 ) is 1100℃, it will have 3.0×10 17 cm -3 A GaN layer with a silicon concentration of 50.8 mm in diameter is grown onto a GaN substrate with a diameter of 50.8 mm. After growth, the GaN layer was annealed for 6 minutes while the temperature was decreased from 1100°C to 500°C at a ramp rate of 100°C / min.

[0088] The surface of the GaN layer was made as a surface obtained by inclining the normal to the (0001) plane by 0.01° in the direction and by 0.01° in the direction. The dislocation density of the GaN layer returns to 5.0×10 7 cm -2 .

[0089] The carrier concentration in the GaN layer is 1×10 17 cm -3 (...

Embodiment 1-1 to 1-10

[0093] In Examples 1-1 to 1-10, the ramp-down temperature was changed for GaN layers having two kinds of silicon concentrations, and the GaN layers were tested.

[0094] In Example 1-1, the GaN layer was formed as in Reference Example 1-1, except that the ramp rate was 50° C. / minute, and the annealing time was 12 minutes. The carrier concentration, activation rate and yield are shown in Figure 6.

[0095] In Examples 1-2 to 1-10, the GaN layer was formed in the same manner as in Example 1-1, except that the silicon concentration, ramp rate, and annealing time were appropriately changed. The carrier concentration, activation rate and yield are shown in Figure 6.

Embodiment 2-1 to 2-4

[0097] In Examples 2-1 to 2-4, the growth temperature (T 0 ), and the GaN layer was tested.

[0098] In Example 2-1, in addition to the growth temperature (T 0 ) was 1050° C. and the annealing time was 11 minutes, a GaN layer was formed in a similar manner to Example 1-1. The carrier concentration, activation rate and yield are shown in Figure 6.

[0099] In Examples 2-2 to 2-4, in addition to appropriately changing the silicon concentration, the growth temperature (T 0 ) and annealing time, a GaN layer was formed in a similar manner to Example 2-1. The carrier concentration, activation rate and yield are shown in Figure 6.

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Abstract

Provided is a gallium nitride substrate for advancing carrier concentration and lowing breaking incidence rate and a method of forming gallium nitride film (52), which is generated with carrier concentration more than 1*10<17> cm<3>. Firstly, a gallium nitride layer (51) including n-type dopant is formed on a substrate (51). Then gallium nitride film (52) is formed by heating the gallium nitride layer (51) on the substrate (50).

Description

technical field [0001] The present invention relates to gallium nitride substrates and to methods of forming gallium nitride films. Background technique [0002] An n-type gallium nitride substrate doped with oxygen, silicon or other n-type dopants is known, for example, as disclosed in Japanese Unexamined Patent Application Publication No. 2000-44400. The carrier concentration in these GaN substrates is 1×10 16 cm -3 to 1×10 20 cm -3 . [0003] Increasing the level of n-dopant concentration in order to increase the carrier concentration, however, tends to make the GaN crystal more brittle, as in the just mentioned GaN substrate. As a result, the occurrence rate of cracks in gallium nitride substrate manufacturing operations and in epitaxial growth and device manufacturing processes using GaN substrates is detrimentally increased. Any cracks in the GaN substrate make it defective. Thus, there is still room for improvement in gallium nitride substrates, as well as in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C30B29/40C30B25/20H01L21/205H01L33/06H01L33/32
CPCH01L21/02389H01L21/02433H01L21/0254H01L21/02576H01L21/02609H01L21/324
Inventor 中畑成二
Owner SUMITOMO ELECTRIC IND LTD
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