Vertical pulling type single crystal growth furnace

Abstract

The invention provides a Czochralski single-crystal growth furnace in order to solve the technical problem of reducing the argon gas consumption of the Czochralski single-crystal growth furnace. The Czochralski single-crystal growth furnace comprises an argon gas input pipe and an annular gas distributor which is communicated with the argon gas input pipe, and is characterized in that: the pressure of argon gas inputted through the argon gas input pipe is between 0.8x10 < 3 > and 0.9x10 < 3 >Pa, and the flow rate of the argon gas is 30 liters per minute. The Czochralski single-crystal growth furnace also comprises a bowl-shaped air flow guide device which is arranged between the lower part of a crucible supporter and an air outlet, wherein, the bowl-shaped air flow guide device comprises acenter shaft hole, a pair of electrode holes, and a ventholes which are opposite to the air outlet; a graphite center shaft passes through the center shaft hole of the air flow guide device; electrode poles respectively pass through the electrode holes; the air outlet is communicated with the ventholes of the air flow guide device; and the upper end part of the air flow guide device is arranged between an insulated cylinder and a heating element.

Description

technical field [0001] The invention relates to a Czochralski single crystal growth furnace. Background technique [0002] figure 1 Schematic cross-sectional view of a single crystal furnace for manufacturing silicon single crystals for the Czochralski (Czochralski) method; Figure 1-2 Among them, 1 is the furnace tube, 2 is the insulation cover, 3 is the insulation cover, 4 is the insulation material, 5 is the insulation cover, 6 is the heater, 7 is the water jacket, 8 is the quartz crucible, 9 is the guide tube, and 10 is the Bottom guard plate, 12 is an argon gas input pipe, 11 is an annular gas distributor distributed with air outlet holes 11-1, and 13 is an exhaust port. [0003] During the growth process of Czochralski silicon single crystal, argon gas needs to be continuously filled into the furnace and mixed with silicon monoxide and impurity dust generated in the furnace. Since the heater and crucible support in the single crystal furnace are all made of graphite ...

AI Technical Summary

Problems solved by technology

[0004] the above figure 1 The shortcoming of the single crystal furnace is: the space in the single crystal furnace is large, especially the space under the crucible holder is large, resulting in the mixed gas under the crucible holder cannot be discharged in time, and the heat energy consumption is large; in addition, the current In the prior art, when argon is charged into the furnace from the argon input pipe, the inflation pressure is 1.3×10 3 Pa, the argon flow rate is 40L / min, so its argon consumption is large and the production cost is high

[0006] The disadvantage of the above-mentioned prior art is that the mixed gas under the crucible holder of the single crystal furnace cannot be effectively discharged, so that the silicon monoxide in the mixed gas will corrode the heater and the crucible, affecting the service life of the single crystal furnace

And the inflation pressure when filling argon into the furnace is 1.3×10 3 Above Pa, the flow of argon gas is relatively large, so the consumption of argon gas is large, and the production cost is high.

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