Self-rotation valve with vertical magnetic anisotropy

An anisotropic, spin-valve technology, applied in magnetic field-controlled resistors, spin-exchange coupled multilayer films, magnetic recording heads, etc., can solve problems such as magnetic vortex effects, large noise, and system instability

Inactive Publication Date: 2008-12-10
FUDAN UNIV
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the size is reduced to a certain extent, the free layer with horizontal magnetic anisotropy in the traditional spin valve will have a serious magnetic vortex effect, which makes the flip of the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-rotation valve with vertical magnetic anisotropy
  • Self-rotation valve with vertical magnetic anisotropy
  • Self-rotation valve with vertical magnetic anisotropy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Structure: Corning Glass / Ta 3nm / Cu 0.6-3.0nm / [Ni 0.59nm / Co 0.33nm] 3 / Cu 2.3nm / [Co 0.25nm / Ni 0.59nm] 5 / Ta 3nm.

[0029] This example is a set of pseudo-spin valves with a Cu buffer layer thickness of 0.6nm-3.0nm. like figure 2 As shown, when the thickness of Cu changes from 0.6nm to 3.0nm, this group of pseudo-spin valves all exhibit relatively good magnetic perpendicular anisotropy, and the GMR signals are above 5.7%. A Cu buffer layer smaller than 0.6nm will destroy the magnetic perpendicular anisotropy, and a Cu buffer layer larger than 3.0nm will make the GMR signal too small.

Embodiment 2

[0031] Structure: Corning Glass / Ta 3nm / Cu 1.4nm / [Ni 0.59nm / Co 0.33nm] 3 / Cu 2.3nm / [Co 0.25nm / Ni0.59nm]4-7 / Ta 3nm

[0032] This example is a group of pseudo-spin valve samples whose period number ranges from 4-7 for the reference layer Co / Ni multilayer film. like image 3 As shown, when the number of cycles increases from 4 to 6, the GMR signal increases from 7.12% to 7.72%, and all have better magnetic vertical anisotropy.

Embodiment 3

[0034] Structure: Corning Glass / Ta 3nm / Cu 1.4nm / [Ni 0.59nm / Co 0.33nm] 3 / Cu 2.1-3.3nm / [Co 0.25nm / Ni 0.59nm] 5 / Ta 3nm

[0035] This example is a series of pseudo-spin valves with Cu thickness in the middle layer ranging from 2.1-3.3nm. like Figure 4 It is shown that the thickness of the intermediate layer increases from 2.1nm to 3.3nm, and the GMR signal decreases from 7.69% to 5.68%, all of which can meet the requirements, and the magnetic perpendicular anisotropy is not affected.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

This invention belongs to the technical field of magnetic recording, specifically is a spin valve with vertical magnetic anisotropy. Ferromagnetic layers of upper, middle and lower adopt Co/Ni multi-layer film structure and are made by utilizing a method of magnetron sputtering to deposit under the normal temperature. The Co/Ni multi-layer film includes the feature of a preferred direction of magnetization vertical with a film surface because of larger surface and interface anisotropy, and the properties, such as the coefficient of the magnetic vertical anisotropy, the coercive force can be modulated through thicknesses, periodicity and buffer layer of layers of Co, Ni. In addition, Co and Ni are the magnetic materials and have bigger spin polarizability. A whole spin valve and a pseudo spin valve GMR signal can achieve 5/4 to 7.7%; and the exchange bias field of the whole spin valve can achieve more than 4500e, and the thermal stability can achieve 250 degrees centigrade. This invention has an important application value in the computer hard disk reading head, MRAM and the other spin electronic apparatuses.

Description

technical field [0001] The invention belongs to the field of magnetic recording technology, in particular to a non-volatile magnetic random access memory and other spin electronic devices, in particular to a spin valve with perpendicular magnetic anisotropy. technical background [0002] Since the traditional spin valve utilizes the in-plane magnetic anisotropy of the magnetic film, the performance will be seriously affected by the boundary magnetic eddy current effect when preparing the nanoscale devices required in future electronic devices. With the continuous development of information technology, the requirements for magnetic storage technology are also increasing. In order to meet the ultra-high density storage target, whether it is in the computer hard disk or in the MRAM, the spin valve unit is required to be reduced to hundreds or even several nanometers in size. However, when the size is reduced to a certain extent, the free layer with horizontal magnetic anisotro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01F10/32H01L43/08H01L29/66G11B5/39
Inventor 张宗芝赵慧李振亚马斌金庆原
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap