A/d conversion circuit, control method thereof, solid-state imaging device, and imaging apparatus

一种转换电路、电压的技术,应用在模数转换器、模/数转换、代码转换等方向,能够解决难以同时实现电路部分小面积占用和噪声减少等问题,达到减少占用面积的效果
CN101320974AInactive Publication Date: 2008-12-10SONY CORP

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SONY CORP
Publication Date
2008-12-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

An A / D conversion circuit includes: an input capacitance to which an input signal and a reference signal are sequentially applied; an operational amplifier; a first switch connected between the other end of the input capacitance and a first input end of the operational amplifier; a feedback capacitance connected to the first input end of the operational amplifier; a second switch connected between the other end of the feedback capacitance and an output end of the operational amplifier; a third switch selectively applying a predetermined voltage to the other end of the feedback capacitance; a fourth switch selectively causing a short circuit between the first input end and the output end of the operational amplifier; a fifth switch applying the predetermined voltage to a second input end of the operational amplifier; and a sixth switch applying a ramp reference voltage to the second input end of the operational amplifier.
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Description

technical field

[0001] The present invention relates to an analog-digital (A / D) conversion circuit and a control method thereof, a solid-state imaging device, and an imaging device. Specifically, the present invention relates to an A / D conversion circuit having a comparator and a control method thereof, a solid-state imaging device using the A / D conversion circuit, and an imaging apparatus having the solid-state imaging device. Background technique

[0002] In a solid-state imaging device such as a CMOS (Complementary Metal Oxide Semiconductor), it may be difficult to simultaneously achieve small area occupation of a circuit portion and noise reduction. In order to reduce noise in a CMOS image sensor, there is known a technique in which a readout circuit (column circuit) is arranged for each column in which pixels of a pixel array section are arranged to read out from a pixel To read out a signal, this technique amplifies the signal by performing arithmetic on a narrow nois...

Claims

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