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Wafer silicon layer scratch check device and scratch check method

A flaw detection device and silicon layer technology, which is applied to measurement devices, instruments, material analysis by electromagnetic means, etc., can solve the problems of eddy current flaw detection obstacles, noise generation, inability to detect flaws, etc., and achieve the effect of cost-effective and simple structure

Inactive Publication Date: 2009-02-04
MARUBUN
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  • Application Information

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Problems solved by technology

However, when using eddy current for flaw detection, if the flaw detection object contains some kind of silicon layer, for example, noise will be generated from the silicon, so accurate flaw detection cannot be performed.
Therefore, among those skilled in the art, it is believed that silicon will cause obstacles to eddy current testing.
[0009] Based on this background, everyone has reached a tacit agreement that semiconductor wafers with a silicon layer cannot be used for eddy current testing.

Method used

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  • Wafer silicon layer scratch check device and scratch check method
  • Wafer silicon layer scratch check device and scratch check method
  • Wafer silicon layer scratch check device and scratch check method

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Embodiment

[0046] Hereinafter, the results of experiments conducted by the present inventors on normal silicon and low-resistance silicon will be described. In this experiment, the crack detection unit 4 was configured as shown in FIG. 2 , and the crack output (voltage) was measured.

[0047] Figure 5 It shows that a wafer made of ordinary silicon (resistivity 10Ω·m, single layer of silicon, thickness: 0.2mm, distance between the surface of the wafer and the coil sensor: 1mm) is used as a sample, and the coil sensor 1 is applied A graph showing the relationship between the crack output (voltage) and the measurement position when a high-frequency wave with a frequency of 5 MHz is used. For wafers known to have no cracks or scratches ( Figure 5 (a)) and cracked wafers ( Figure 5 The results of the two samples of (b)) are compared, and no wave crest or inclination angle is found in the qualified product wafer, while in the cracked wafer, the inclination angle (( Figure 5 circled par...

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Abstract

It is possible to detect a crack or scratch existing in a wafer silicon layer easily and in a short time. A scratch check device includes: a coil sensor arranged at a predetermined distance from a silicon surface; a high frequency application unit for applying a high frequency to the coil sensor; a scan mechanism unit for relatively moving the silicon layer and the coil sensor while maintaining the distance between the surface of the silicon layer and the coil sensor; and a crack detection unit for detecting a crack or a scratch existing in the silicon layer by detecting a change of a signal outputted from the coil sensor or a change of the high frequency applied from the high frequency application unit. The high frequency applied to the high frequency application unit is set to 5 MHz to 200 MHz. This enables a scratch check in the silicon layer which has been impossible conventionally. When the silicon in which a scratch check is to be performed has a low resistance, the frequency applied is set to 0.5 MHz to 200 MHz.

Description

technical field [0001] The present invention relates to a device and method for detecting cracks or flaws existing on a silicon layer of a semiconductor wafer (hereinafter, abbreviated as "wafer" as appropriate) in a non-contact manner. In more detail, it relates to an apparatus for detecting cracks or flaws existing on a silicon layer of a wafer by using eddy currents, and a detection method thereof. Background technique [0002] Wafers as IC (Integrated Circuit) substrates are made by dividing and manufacturing a crystalline columnar blank of raw material (the raw material of the wafer is generally not only silicon (Si), but germanium (Ge), gallium arsenide (GaAs), etc.) A disc with a thickness of about 0.5 to 1.5 mm is formed. In addition, a wafer also refers to a multilayer structure in which an oxide thin layer, a metal layer, and the like are further formed on the disk produced as described above. [0003] In recent decades, components included in ICs have been conti...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/90
CPCG01N27/9026G01N27/902G01N27/90H01L22/00
Inventor 白坂智久榊哲夫小林恒雄
Owner MARUBUN
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