lining of a chamber

Abstract

The present invention provides a chamber liner for lining a semiconductor processing chamber. The liner includes a side wall whose shape and size are adapted to the shape and size of the inner wall of the semiconductor processing chamber, and shielding holes are provided on the side wall of the liner. The lining of the chamber provided by the invention is suitable for side pumping semiconductor processing chambers, and can reduce or even avoid the generation of thin film accumulations on the inner wall of the processing chamber, thereby effectively protecting the inner wall of the processing chamber and reducing particle pollution, thereby improving semiconductor devices such as wafers processing / handling quality.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular, to a lining for chambers in semiconductor processing / processing techniques. Background technique [0002] As we all know, semiconductor manufacturing technology includes processes such as deposition of metals, dielectrics, and other semiconductor materials, etching of the above materials, and removal of photoresist mask layers. Wherein, the etching process includes gate etching, dielectric etching, metal etching, etc., and plasma etching technology is widely used in these etching processes. [0003] The above-mentioned semiconductor manufacturing and processing processes usually need to be performed in a semiconductor processing chamber. A typical semiconductor processing chamber includes a chamber, plasma generation and control equipment, process gas delivery equipment, wafer chucks for wafer holding, and process components. Among them, the process components are used t...

AI Technical Summary

Problems solved by technology

Second, the film can change the RF ground path and thus affect the quality of the processed device such as the obtained wafer

[0012] Although the lining described in the above Chinese patent can reduce or even avoid the formation of film accumulation on the inner wall of the processing chamber, thereby effectively protecting the inner wall of the processing chamber and reducing particle pollution , but it has the following defects: First, the range of protection of this lining structure is too narrow to effectively protect the adjustment bracket below the quartz window and the pumping chamber below the shielding plate, and cannot avoid the generation of particles to the greatest extent , thus causing contamination on the wafer; Second, the flow field in the processing chamber provided by this lining structure, especially the uniformity of the flow field on the surface of the silicon wafer, also has certain limitations, thus limiting the surface area of ​​the silicon wafer. The uniformity of the flow field is further improved; thirdly, and more importantly, the lining of this structure is only suitable for down-pumping or side-pumping semiconductor processing chambers, not for side-pumping semiconductor processing chambers

Images