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Method for forming convex point structure formed by etching composition for convex point lower metal layer

A technology of under-bump metal and composition, which is applied in the direction of surface etching composition, chemical instruments and methods, electrical components, etc., and can solve the problems of damaged probe tip, wear, and reduced productivity.

Active Publication Date: 2009-05-27
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, cleaning can cause abrasion and possibly damage the probe tip
thus reducing productivity
Also, these cleaning treatments may not be sufficient to remove impurities from the probe tip

Method used

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  • Method for forming convex point structure formed by etching composition for convex point lower metal layer
  • Method for forming convex point structure formed by etching composition for convex point lower metal layer
  • Method for forming convex point structure formed by etching composition for convex point lower metal layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] A solution was prepared comprising about 79.49% by weight of hydrogen peroxide (H 2 o 2 ), about 3% by weight of aqueous lye including tetramethylammonium hydroxide (TMAH), about 0.5% by weight of ethylene glycol (EG), about 17% by weight of dipotassium ethylenediaminetetraacetic acid (EDTA- 2K) and about 0.01% by weight of nonionic surfactant NCW (trade name; manufactured by Wako Pure Chemical Industries, Ltd. of Japan). The solution was stirred for about 30 minutes to prepare the etching composition for the UBM layer. The aqueous lye comprising tetramethylammonium hydroxide comprises about 25% by weight tetramethylammonium hydroxide.

Embodiment 2

[0082] In addition to using about 72.49% by weight of hydrogen peroxide and about 10% by weight of ammonium hydroxide (NH 4 OH) except for the aqueous alkali solution, an etching composition was prepared in substantially the same manner as in Example 1. The aqueous lye comprising ammonium hydroxide comprises about 38% by weight ammonium hydroxide.

experiment example 1

[0097] Evaluation of the etching performance and cleaning performance of the etching compositions in Example 1, Example 2 and Comparative Examples 1 to 5.

[0098] Substrates were prepared for evaluating the etching performance of the etching compositions according to Example 1, Example 2, and Comparative Examples 1 to 5. A titanium (Ti) layer, a titanium tungsten (TiW) layer, an aluminum (Al) layer, a silicon oxynitride (SiON), and a polyimide layer are respectively formed on each substrate. The substrates were etched by immersing the substrates in the etching compositions according to Example 1, Example 2, and Comparative Examples 1 to 5 at a temperature of about 40° C. to about 70° C. for about 1 to about 5 minutes, respectively. Clean each substrate by immersing the substrate in distilled water for approximately 5 min. Then, each substrate was dried using argon or nitrogen. A microscope was used to observe the surface of the substrate on which the aluminum layer, the sil...

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PUM

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Abstract

The invention provides a method of forming a bump structure by use of an etching composition used for an under-bump metallurgy layer. In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H2O2), about 1% by weight to about 20% by weight of an aqueous basic solution including ammonium hydroxide (NH4OH) or tetraalkylammonium hydroxide, about 0.01% by weight to about 10% by weight of an alcohol compound, and about 2% by weight to 30% by weight of an ethylenediamine-based chelating agent. The etching composition may effectively etch the UBM layer including titanium or titanium tungsten and remove impurities.

Description

technical field [0001] Exemplary embodiments of the present invention relate to etching compositions for under-bump metallurgy (UBM) layers, and methods of forming bump structures. More particularly, exemplary embodiments of the present invention relate to an etching composition for preventing and / or reducing generation of impurities on a conductive bump, and a method of forming a bump structure using the same. Background technique [0002] Generally, conductive bumps are used to electrically connect semiconductor chips and electronic devices. An electrical die sorting (EDS) process may be performed to examine the performance of semiconductor chips having conductive bumps formed thereon. The EDS process measures electrical characteristics of a semiconductor chip on which conductive bumps are formed using a probe station to determine whether the semiconductor chip is defective. The probe station includes a probe card for inputting / outputting electrical signals through probe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/02C23F1/32
CPCH01L2924/01074H01L2924/01023H01L2924/01029H01L2924/01047H01L2924/01024H01L2924/01046H01L24/11H01L2924/01013H01L2924/01006H01L2924/01022H01L2924/01079H01L2224/11H01L2924/14H01L2924/00H01L2924/00012C09K13/06
Inventor 姜东旻姜宝滥金永南林永
Owner SAMSUNG ELECTRONICS CO LTD