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Method for reinforcing zinc oxide film blue light emission

A zinc oxide film, blue light technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low blue light emission efficiency and many defects in ZnO film, and achieve the effect of wide application, enhanced blue light emission of ZnO, and simple operation.

Inactive Publication Date: 2009-05-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for enhancing the blue light emission of ZnO thin films, so as to solve the problem that the blue light emission efficiency is not high due to too many defects in the current preparation of ZnO thin films

Method used

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  • Method for reinforcing zinc oxide film blue light emission
  • Method for reinforcing zinc oxide film blue light emission
  • Method for reinforcing zinc oxide film blue light emission

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Embodiment

[0022] Growth process:

[0023] 1) The equipment used for growth is a three-target radio frequency magnetron sputtering system, including a sample chamber, a deposition chamber, a vacuum system, a radio frequency power supply and a matching system, a substrate heating and temperature control system, a sample rotation system, etc.;

[0024] 2) Using 99.99% high-purity metal Ag target and 99.99% high-purity ZnO ceramic target as sputtering target;

[0025] 3) loading the above-mentioned target material on the radio frequency target platform in the deposition chamber;

[0026] 4) Place the Si(001) substrate on the sample holder, and adjust the distance between the target and the substrate to be 80mm;

[0027] 5) The background vacuum of the sample chamber is 1×10 -5 Pa;

[0028] 6) First grow the Ag film, the process conditions are: the working gas is high-purity argon (Ar) gas, the working pressure is 1.0-2.0Pa, the radio frequency sputtering power is 20-80W, the substrate te...

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Abstract

The invention discloses a method for enhancing ZnO film blue-ray emission. The method relates to semiconductor technology, and comprises the following steps: preparing a ZnO / Ag composite thin-film; accelerating recombination of interband emission of ZnO by using resonant coupling between plasmon on the surface of Ag and interband emission of the ZnO; and coupling plasmon into light by using the film surface of Ag with certain roughness to achieve the aim of enhancing the ZnO film blue-ray emission. Comparing photoluminescence performance of the ZnO / Ag composite thin-film with that of a ZnO film, a discovery that the participation of the plasmon on the surface of the Ag can improve intensity of the interband emission of the ZnO by 50 times is made; at the same time, the method can effectively suppress green light emission caused by the flaw on the ZnO film. The method not only can enhance the ZnO blue light emission, but also can be extensively applied to other semiconductor luminous materials and other types of luminophors.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for enhancing blue light emission of a zinc oxide (ZnO) thin film. technical background [0002] Zinc oxide (ZnO) is an important II-VI wide bandgap and direct bandgap semiconductor material. At room temperature, its bandgap width is 3.37eV, and the exciton binding energy is 60meV. Another new type of photoelectric material is the best candidate material for short-wavelength light-emitting diodes and semiconductor lasers. It has a wide range of applications in high-tech fields such as information storage and display, optical communication, semiconductor white light lighting, medicine, and biology. It is the current semiconductor material. Hotspots in science and device research. At present, people have been able to use methods such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD) and magnetron sputtering to prepare ZnO thin films w...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 张兴旺游经碧范亚明屈盛陈诺夫
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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