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Method for fabricating metal bonding electrode on semiconductor surface

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of low yield, long production cycle, large labor, etc., to improve quality and pass rate, reduce the thickness of Au layer, reduce Effects of complexity and its cost

Inactive Publication Date: 2010-09-01
JIANGXI LIANCHUANG OPTOELECTRONIC SCIENCE AND TECHNOLOGY CO LTD
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Then evaporate the Ti / Au layer on the basis of this pattern, and form the same pattern for the first time by plate alignment and wet etching. The disadvantage of this method is that plate alignment and wet etching are required. Quality problems such as heavy labor, long production cycle, graphic deformation, and low yield

Method used

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Experimental program
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Effect test

Embodiment 1

[0014] Firstly, a gallium aluminum indium phosphide (GaAlInP) substrate is provided, and then a photoresist layer is coated on the surface of the substrate, and an electrode region blank area is formed in the photoresist layer. Then, the Ti / AuBe / Au / Pd / Au composite structure is sequentially evaporated by vacuum evaporation. Then use alkaline solution to remove the photoresist layer on the surface of the semiconductor substrate. While removing the photoresist layer on the surface of the substrate, the metal attached to the surface of the photoresist layer will be removed at the same time, but the metal in the electrode area will remain on the surface of the substrate. Form the desired electrodes. The substrate with electrodes on the surface is placed in a high-temperature nitrogen-hydrogen mixed gas environment for alloying treatment. The alloying temperature is 420°C, which is based on the formation of an ohmic contact between the semiconductor surface and the metal.

Embodiment 2

[0016] Firstly, a gallium arsenide (GaAs) substrate is provided, and then a photoresist layer is coated on the surface of the substrate, and a blank area of ​​an electrode region is formed in the photoresist layer. Then the composite structure of Au / AuBe / Au / Pd / Au is sequentially evaporated by vacuum evaporation method. Then use alkaline solution to remove the photoresist layer on the surface of the semiconductor substrate. While removing the photoresist layer on the surface of the substrate, the metal attached to the surface of the photoresist layer will be removed at the same time, but the metal in the electrode area will remain on the surface of the substrate. Form the desired electrodes. The substrate with electrodes on the surface is placed in a high-temperature nitrogen-hydrogen mixed gas environment for alloying treatment. The alloying temperature is 360°C, which is based on the formation of an ohmic contact between the semiconductor surface and the metal.

Embodiment 3

[0018] Firstly, a gallium aluminum arsenide (GaAlAs) substrate is provided, and then a photoresist layer is coated on the surface of the substrate, and an electrode region blank area is formed in the photoresist layer. Then the composite structure of Au / AuBe / Au / Pd / Au is sequentially evaporated by vacuum evaporation method. Then use alkaline solution to remove the photoresist layer on the surface of the semiconductor substrate. While removing the photoresist layer on the surface of the substrate, the metal attached to the surface of the photoresist layer will be removed at the same time, but the metal in the electrode area will remain on the surface of the substrate. Form the desired electrodes. The substrate with electrodes on the surface is placed in a high-temperature nitrogen-hydrogen mixed gas environment for alloying treatment. The alloying temperature is 380°C, which is based on the formation of ohmic contact between the semiconductor surface and the metal.

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Abstract

The invention relates to a method for producing a metal bonding electrode on a semiconductor surface. The method is characterized in that the technique comprises the following steps: firstly, a semiconductor grounding is provided to form a metal composite structure; a photoresist layer on a semiconductor grounding surface is removed by alkaline solution and simultaneously metal adhering to the photoresist layer surface is removed; however, metal in a blank area is reserved on the grounding surface to form a required electrode and the ohmic contact between the semiconductor surface and the metal; palladium is added into the evaporated metal composite structure and then the composite structure acts as a barrier layer for diffusion of beryllium atom at high temperature to ensure bonding property of the electrode. The invention has the advantages that electrode detachment and pattern deformation resulting from blockage and deformation of screen mesh can be avoided and the aim to reduce Aulayer thickness and save cost can be achieved.

Description

technical field [0001] The invention relates to a method for manufacturing an electrode, in particular to a method for manufacturing a gold-bonded electrode on a semiconductor surface. Background technique [0002] In the production of semiconductor light-emitting device (LED) chips, gold and its alloys are the main raw materials for making bonding electrodes, which account for a large proportion of production costs. People urgently need to find ways to reduce the cost of precious metals while ensuring the bonding electrodes method of solderability. [0003] There are two main methods of making LED chip electrodes at present: the first one is to vapor-deposit AuBe / Au structure on the surface of the epitaxial wafer at one time, peel off the stainless steel mesh to form the required pattern, and then form the electrode and the surface of the epitaxial material by high-temperature alloying. ohmic contact. The disadvantage of this method is that when AuBe is alloyed at high te...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/28
Inventor 叶建青何民华周力万金平
Owner JIANGXI LIANCHUANG OPTOELECTRONIC SCIENCE AND TECHNOLOGY CO LTD
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