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Electro-optic modulator of SOI substrate and CMOS process

An electro-optic modulator and modulator technology, applied in the fields of instruments, optics, nonlinear optics, etc.

Inactive Publication Date: 2010-06-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The SOI substrate standard CMOS process high-speed electro-optic modulator proposed by the present invention solves the above two problems

Method used

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  • Electro-optic modulator of SOI substrate and CMOS process
  • Electro-optic modulator of SOI substrate and CMOS process
  • Electro-optic modulator of SOI substrate and CMOS process

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Embodiment Construction

[0024] Specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0025] figure 1 A cross-sectional view showing the structure of a standard CMOS process high-speed electro-optic modulator on an SOI substrate, including: an SOI substrate 11, an n well 18, an n+ implantation region 17, a p well 19, a p+ implantation region 13, a shallow trench isolation layer (STI) 12, A silicon dioxide layer 14 , a metal layer 15 and a contact hole 16 . All process layers forming the above modulator structure adopt standard CMOS process, which can be completed by a microelectronic foundry of standard CMOS process only by defining the layout, and can easily realize monolithic integration with other microelectronic devices.

[0026] The SOI substrate 11 uses the same doping concentration as the CMOS process, generally p-type 10 16 cm -3 . The concentration of n well 18, p well 19 and n+ implant region 17, p+ implant region 13 is det...

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Abstract

The invention provides a high speed electro-optical modulator of standard CMOS technics with SOI substrate which solves the two hereinbefore problems. Applied reverse bias voltage causes depletion region in the pn junction formed by n pit and substrate, thus the distribution of the current carrier of ridge waveguide is changed. Under the reverse bias voltage, current carriers drift fast in the depletion region of the highfield, thus the limit to the responding speed of modulator caused by the slow spread of current carriers when pouring in positive direction is avoided. The high speed electro-optical modulator of standard CMOS technics with SOI substrate does not include an etching process, the wave guide cladding of which is accomplished by shallow trench isolantion of the CMOS technics.All layers of the modulator are processed by adopting standard CMOS technics, and can be accomplished on standard CMOS technics line with SOI substrate, without altering standard CMOS technics process.

Description

technical field [0001] The invention relates to an electro-optic modulator, in particular to a high-speed electro-optic modulator of SOI substrate standard CMOS technology. Background technique [0002] The integration level of integrated circuits is rapidly advancing at a speed of doubling every two years according to Moore's Law, and the simultaneous reduction in the size of transistors and interconnection lines makes the integration level of chips higher and lower, and the cost is getting lower and lower. Although the delay of a single transistor is getting smaller and smaller as the level of integration increases, the delay of interconnect lines is getting bigger and bigger. This is because the reduction in the size of the interconnection wires increases the resistance of the interconnection wires. Although the use of copper interconnections instead of the previous aluminum interconnections can reduce the resistance and the electrical mobility of the interconnection wire...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/03
Inventor 陈弘达黄北举董赞
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI