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Low-voltage low-power consumption CMOS voltage reference circuit

A voltage reference and reference circuit technology, applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve the problems of increasing circuit area and reducing reference circuit speed, achieving low power consumption and cost, reducing area, The effect of high integration

Active Publication Date: 2009-07-01
SOI MICRO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The extra capacitance not only increases the area of ​​the circuit, but also greatly reduces the speed of the reference circuit

Method used

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  • Low-voltage low-power consumption CMOS voltage reference circuit
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  • Low-voltage low-power consumption CMOS voltage reference circuit

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Embodiment Construction

[0042] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0043] Such as figure 1 as shown, figure 1 It is a circuit diagram of a low-voltage low-power consumption voltage reference circuit according to the present invention, and the CMOS voltage reference circuit includes a start-up circuit 11, a self-bias current source 12, a voltage generator 13 with a negative temperature coefficient, and a reference voltage regulator device 14, and a single-tube current mirror MOS transistor M 0 .

[0044] Wherein, the start-up circuit 11 is composed of a transistor M S0 , M S1 and M S2 constitute; among them, the PMOS transistor M S0 and NMOS transistor M S1 form a basic inverter cell, M S0 , M S1 The drain and gate of the transistor are respectively connected, and the source is r...

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Abstract

The invention discloses a low-voltage low-power-consumption CMOS voltage reference circuit, which is used for generating a voltage reference. The CMOS voltage reference circuit comprises a starting circuit 11, a self-bias current source 12, a voltage generator 13 with negative temperature coefficient, a voltage reference regulator 14 and a single-tube current mirror MOS transistor M0. The CMOS voltage reference circuit adopts an MOS transistor operating at a sub-threshold area to generate a voltage with negative temperature coefficient, utilizes a sleeve and a folded structure of the MOS transistor operating at the sub-threshold area to substitute a resistance for amplifying a voltage with positive temperature coefficient, thereby offsetting the voltage with positive temperature coefficient by the voltage with negative temperature coefficient, and generating a temperature-independent voltage reference. The CMOS voltage reference circuit eliminates the use of passive devices and an operation amplifier, wherein the passive devices relate to a resistance, a capacitor and the like, thereby greatly reducing the component number of the circuit and the static operating current, and reducing the power consumption and the area of the circuit.

Description

technical field [0001] The invention relates to the technical field of reference circuits, in particular to a low-voltage and low-power consumption CMOS voltage reference circuit and a generation method thereof. Background technique [0002] The reference voltage reference circuit is one of the indispensable building blocks in many analog and digital circuit designs. Reference sources are widely used in various analog and digital circuits due to their low temperature coefficient and low supply voltage dependence. [0003] The traditional bandgap reference source uses a circuit proportional to the absolute temperature to offset the negative temperature characteristics of the base-emitter junction of the bipolar transistor, and the output voltage is generally about 1.25V, which is the bandgap voltage of silicon. With the advancement of deep submicron integrated circuit technology, the power supply voltage of the current mainstream or soon to become mainstream CMOS technology ...

Claims

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Application Information

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IPC IPC(8): G05F3/24
Inventor 王晗叶青
Owner SOI MICRO CO LTD
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