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Electrostatic chuck and substrate temperature adjusting-fixing device

An electrostatic chuck and substrate technology, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of increased cost, disturbance of the temperature uniformity of the substrate 107, and complicated structure of the substrate 106, and achieves the realization of temperature uniformity, Achieving the effect of manufacturing cost

Inactive Publication Date: 2009-07-01
SHINKO ELECTRIC IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] However, in the substrate temperature adjustment fixture 100 according to the conventional art, since all the water passages 104 and the annular air passage 108 are provided inside the substrate 106, the structure of the substrate 106 becomes complicated.
In addition, since the substrate 106 becomes expensive due to processing using electron beam welding or the like, there is a problem that the cost of manufacturing the substrate temperature adjustment and fixing device 100 increases.
[0022] In addition, since all the water passages 104 and the annular gas passage 108 are provided in the substrate 106, the temperature of the inert gas introduced into the annular gas passage 108 is affected by the temperature of the substrate 106, thereby causing the problem that the temperature uniformity of the substrate 107 is disturbed.

Method used

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  • Electrostatic chuck and substrate temperature adjusting-fixing device
  • Electrostatic chuck and substrate temperature adjusting-fixing device
  • Electrostatic chuck and substrate temperature adjusting-fixing device

Examples

Experimental program
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Effect test

no. 1 example

[0062] image 3 is a cross-sectional view showing a simplified example of the substrate temperature adjustment fixing device 10 according to the first embodiment of the present invention. like image 3 As shown, the substrate temperature regulation fixture 10 includes an electrostatic chuck 11 , an adhesive layer 15 , and a substrate 16 . Reference numeral 17 denotes a substrate held by the electrostatic chuck 11 in a suction state. For example, the substrate 17 is made of a silicon wafer or the like.

[0063] The electrostatic chuck 11 is a Coulomb force electrostatic chuck having a base 12 and an electrostatic electrode 13 . The base body 12 is a dielectric and is fixed on a substrate 16 by an adhesive layer 15 . For example, mainly by A1 2 o 3 Or ceramics composed of AlN can be used as the base body 12 .

[0064] For example, the thickness t of the substrate 12 1 is 2mm or more, for example, the specific permittivity (1KHz) of the substrate 12 is in the range of 9 t...

no. 2 example

[0090] In the substrate temperature adjustment fixing device 10 according to the first embodiment of the present invention, for example, in the case where the substrate 17 is made of a silicon wafer, when etching the substrate 17 which is a silicon wafer, RF (high frequency) can be applied to the substrate 16. When RF (high frequency) may be applied to the substrate 16 , a potential difference is generated in the gas path 18 , thereby generating an arc (abnormal discharge) in the gas path 18 in some cases.

[0091] In order to prevent an arc from being generated in the gas path 18, it is effective to perform a process that makes it difficult to generate a potential difference in the gas path 18. In the second embodiment, in order to prevent arcing in the gas path 18 , an example of a substrate temperature adjustment fixture having an electrostatic chuck subjected to a process that makes it difficult to generate a potential difference is shown here.

[0092] Also, in the subst...

no. 3 example

[0101] In the third embodiment of the present invention, in order to prevent arcing in the annular gas path 18, a substrate temperature adjustment fixture having an electrostatic chuck that has undergone a process that makes it difficult to generate a potential difference in the annular gas path 18 is shown here Another example of .

[0102] Figure 7is a cross-sectional view showing a simplified example of a substrate temperature adjustment fixing device 30 according to a third embodiment of the present invention. In the same drawings, the same reference numerals are given to the same components as in the substrate temperature adjustment fixing device 10 according to the first embodiment of the present invention, and descriptions thereof are omitted. like Figure 7 As shown, the substrate temperature adjustment fixture 30 includes an electrostatic chuck 31 , an adhesive layer 15 , and a substrate 16 .

[0103] The electrostatic chuck 31 is a Coulomb force electrostatic chu...

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Abstract

There is provided an electrostatic chuck for adsorbing and holding an adsorption object placed on an upper surface of a base body having an electrostatic electrode embedded therein and for filling inert gas of which a pressure is adjusted into a space formed between the upper surface of the base body and a lower surface of the adsorption object, wherein the base body includes a gas discharge portion embedded therein so as to discharge the inert gas to the space and a gas path embedded therein so as to introduce the inert gas into the gas discharge portion while communicating with the gas discharge portion.

Description

technical field [0001] The invention relates to an electrostatic chuck and a substrate temperature adjusting and fixing device, more specifically, an electrostatic chuck for absorbing adsorbed substances on a substrate and a substrate temperature adjusting and fixing device. Background technique [0002] In the past, since a coating apparatus (for example, a CVD apparatus, a PVD apparatus, etc.) or a plasma etching apparatus for manufacturing a semiconductor unit such as an IC or an LSI has a method for holding a substrate in a vacuum processing chamber with high precision (specifically, for example, , silicon wafer) stage. For example, a substrate temperature adjustment fixture with an electrostatic chuck is proposed as such a stage. The substrate temperature adjustment fixture holds the substrate in an adsorption state with the electrostatic chuck, and performs temperature control so that the substrate held in the adsorption state has a predetermined temperature. [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/00C23C16/458C23C16/46
CPCH01L21/6831H01L21/687H01L21/324
Inventor 渡部直人吉川忠义
Owner SHINKO ELECTRIC IND CO LTD
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