Process for producing high-purity hexafluoropropylene and cleaning gas

A kind of technology of hexafluoropropene and production method, which is applied in the field of production of high-purity hexafluoropropene and achieves the effect of a simple method

Inactive Publication Date: 2009-07-08
SHOWA DENKO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] etc. However, there are still issues and problems regarding the impurities in hexafluoropropylene, especially regarding the purification method and high purity of chlorine-containing compounds as pollution sources

Method used

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  • Process for producing high-purity hexafluoropropylene and cleaning gas

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0064] After thermal decomposition (thermal decomposition temperature 600 ° C) from chlorodifluoromethane (CHClF 2 ) When tetrafluoroethylene is produced, the product is distilled twice to recover tetrafluoroethylene, and then crude hexafluoropropylene is obtained. The crude hexafluoropropylene was analyzed by gas chromatography ["GC-14A" manufactured by Shimadzu Corporation, column: Porapack-Q (6m) manufactured by Shimadzu Corporation, measurement temperature: 80 to 200°C]. The results are shown in Table 1.

Embodiment 1

[0066] 80 g of molecular sieve 13X (manufactured by Union Showa Co., Ltd.: average pore diameter 10 , the ratio of silica / aluminum=0.81) and 70g of carbonaceous adsorbent (carbon molecular sieve 5A, manufactured by Takeda Pharmaceutical Co., Ltd.: average pore diameter ) were mixed and filled into a stainless steel cylinder with a capacity of 1000 ml, and vacuum-dried. Next, while cooling the cylinder, about 550 g of the crude hexafluoropropylene obtained in Preparation Example 1 above was filled thereinto, stirred constantly at room temperature, and the liquid phase was recovered after filling for about 12 hours [step (1)]. The liquid phase was analyzed by gas chromatography ["GC-14A" manufactured by Shimadzu Corporation, column: Porapack-Q (6m) manufactured by Shimadzu Corporation, measurement temperature: 80 to 200°C]. The results are shown in Table 1.

[0067] Next, the liquid phase obtained in the above step (1) is introduced into a distillation column, the low boiling...

reference example 1

[0069] 30 g of molecular sieve 13X (manufactured by Union Showa Co., Ltd.: average pore diameter 10 , the ratio of silica / aluminum=0.81) was filled in a stainless steel cylinder with a volume of 200 ml, and vacuum-dried. Next, while cooling the cylinder, about 70 g of the crude hexafluoropropylene obtained in Preparation Example 1 above was filled thereinto, stirred constantly at room temperature, and the liquid phase was recovered after filling for about 12 hours. The liquid phase was analyzed by gas chromatography ["GC-14A" manufactured by Shimadzu Corporation, column: Porapack-Q (6m) manufactured by Shimadzu Corporation, measurement temperature: 80 to 200°C]. The results are shown in Table 1.

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Abstract

A process for industrially advantageously producing high-purity hexafluoropropylene; and a use of this high-purity hexafluoropropylene, specifically, a cleaning gas for removing deposits in a semiconductor manufacturing apparatus or liquid-crystal manufacturing apparatus. In the process for high-purity hexafluoropropylene production, crude hexafluoropropylene produced by the pyrolysis of chlorodifluoromethane is purified to thereby produce high-purity hexafluoropropylene. It comprises: a step (1) in which the crude hexafluoropropylene is brought into contact with an adsorbent comprising a zeolite having an average micropore diameter of 3.4-11 AA and / or a carbonaceous adsorbent having an average micropore diameter of 3.5-11 AA to reduce the content of chlorine compounds and / or hydrocarbons in the crude hexafluoropropylene; and a step (2) in which the hexafluoropropylene obtained in the step (1) is distilled to reduce the content of low-boiling ingredients therein.

Description

technical field [0001] The invention relates to a method for producing high-purity hexafluoropropylene. In particular, it relates to a method for producing hexafluoropropylene which can be ideally used for removing deposits in semiconductor manufacturing equipment or liquid crystal manufacturing equipment, and uses of high-purity hexafluoropropylene. Background technique [0002] Hexafluoropropylene (hereinafter sometimes referred to as "CF 3 CF=CF 2 "or "FC-1216"), such as cleaning gas in the semiconductor device manufacturing process, octafluoropropane (C 3 f 8 ) is used in raw materials for manufacturing, etc. As its production method, the following methods are known, for example: [0003] (1) Through chlorodifluoromethane (CHClF) represented by the following formula 2 ) thermal decomposition to produce tetrafluoroethylene (CF 2 = CF 2 ) obtained as a by-product in the process, [0004] 2CHClF 2 +H 2 O→CF 2 = CF 2 +CF 3 CF=CF 2 [0005] (2) A method obtain...

Claims

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Application Information

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IPC IPC(8): C07C17/38C07C17/383C07C17/389C07C21/18C23C16/44H01L21/205H01L21/3065
CPCC23C16/4405C07C17/389C07C17/38C07C17/383
Inventor 大野博基大井敏夫
Owner SHOWA DENKO KK
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