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Compositions for removal of etching residues

A technology for etching residues and compositions, which is applied in the preparation of detergent mixture compositions, detergent compositions, organic cleaning compositions, etc. Simultaneous control of metal and non-metal etch rates and other issues

Inactive Publication Date: 2011-08-24
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of cleaning solution usually cannot control the etching rate of metals and non-metals at the same time. After cleaning, it is easy to change the characteristic size of the channel, thereby changing the semiconductor structure; and because of its large etching rate, the cleaning operation window is very small. can have various negative effects
[0004] The inhibitors used in the prior art have pyrocatechol and pyroglucinol. On the one hand, these inhibitors cannot simultaneously control the etching rate of metals and oxides; on the other hand, they have a strong effect on the environment and human beings.

Method used

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  • Compositions for removal of etching residues
  • Compositions for removal of etching residues
  • Compositions for removal of etching residues

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~14

[0041] Table 1 provides the formulas of the cleaning solution composition examples 1 to 14 for plasma etching residues in the semiconductor industry. According to the components listed in Table 1 and their contents, simply mix them uniformly to obtain each cleaning solution .

[0042] Table 1 is used for the cleaning solution composition embodiment 1~14 of plasma etch residue in semiconductor industry

[0043]

[0044]

[0045] Wherein, NMP is N-methylpyrrolidone, DMSO is dimethylsulfoxide, DMAC is dimethylformamide, Sulf is sulfolane, and BTA is benzotriazole.

Embodiment 15

[0047] Table 2 shows the etching rate when the cleaning solution in Example 1 is used to form different substances and different temperatures.

[0048] Table 2

[0049]

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Abstract

Compositions for removal of etching residues include cleansing effective amount of solvent, aqueous buffer solution, fluoride, antifreeze and polymeric inhibitor. The compositions can be used for cleansing etching residues during semiconductor production, and do not corrode SiO2, PETEOS, silicon, low dielectric materials and some metallic metals such as Ti, Al and Cu.

Description

technical field [0001] The invention relates to a cleaning liquid composition, in particular to a cleaning liquid composition used for plasma etching residues in the semiconductor industry. technical background [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photoresist film. The first step uses dry ashing to remove most of the photoresist layer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42C11D7/28
CPCC11D7/10C11D7/50C11D3/37C11D11/0047H01L21/02057C11D3/3761C11D7/261C11D7/265C11D7/5004C11D2111/22
Inventor 刘兵彭洪修王淑敏
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD