Three-silver low radiation film glass capable of being subsequently processed

A low-emissivity film and glass technology, applied in the field of triple-silver low-emission film glass, can solve the problems of long patch cycle, inability to coat, high glass transportation cost, etc., and achieve the effect of various colors, stable optical performance and low emissivity

Inactive Publication Date: 2009-08-05
CSG HOLDING
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] 1. Unable to achieve curved glass coating
[0008] Bending toughened and hot-bent glass is widely used in modern buildings and automobile windshields. Traditional off-line low-e coated glass cannot be subjected to subsequent thermal processing such as bent toughening and hot bending.
None of the existi

Method used

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  • Three-silver low radiation film glass capable of being subsequently processed
  • Three-silver low radiation film glass capable of being subsequently processed

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Embodiment Construction

[0045]The film structure of the three-silver low-e film glass that can be processed subsequently provided by the present invention is: glass substrate / first base dielectric composite layer (5.0-10.0nm) / second base dielectric composite layer (5.0-10.0nm) / First barrier layer (0.5~5.0nm) / first Ag layer (8-35nm) / second barrier layer (0.5~5.0nm) / first interlayer dielectric combination layer (50-70nm) / third barrier layer ( 0.5~5.0nm) / Second Ag layer (8-35nm) / Fourth barrier layer (0.5~5.0nm) / Second interlayer dielectric combination layer (60-80nm) / Fifth barrier layer (0.5~5.0nm) / Third Ag layer (8-35nm) / Sixth barrier layer (0.5-5.0nm) / First upper dielectric combination layer (10-35nm) / Second upper dielectric combination layer (10-30nm).

[0046] Each dielectric film layer is a metal or non-metal oxide or nitride deposited by vacuum sputtering, such as TiO 2 , ZnSnO x , SnO 2 , ZnO, SiO 2 , Ta 2 O 5 , BiO 2 , Al 2 O 3 , ZnAl 2 O 4 , Nb 2 O 5 , Si 3 N 4 , AZO, etc.

[0047] In practical a...

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Abstract

The invention provides a three-silver low radiation film glass supporting subsequent processing, which is characterized in that the film layer structure of the glass comprises glass, a first base layer dielectric combination layer, a second base layer dielectric combination layer, a first blocking layer, a first Ag layer, a second blocking layer, a first interlayer dielectric combination layer, a third blocking layer, a second Ag layer, a fourth blocking layer, a second interlayer dielectric combination layer, a fifth blocking layer, a third Ag layer, a sixth blocking layer, a first upper layer dielectric combination layer, and a second upper layer dielectric combination layer. The invention also provides a process for producing the glass. The three-silver low radiation glass supporting the subsequent processing is produced by adopting a unique film layer configuration, has the performances of low radiance (less than 0.2), stable optical performance, various colors, heat resistance and weather resistance, can achieve allopatric processing and satisfy all the requirements in the subsequent processing of joint products, and can be popularized and applied to vehicle glass and civil architecture glass.

Description

【Technical Field】 [0001] The invention relates to the field of special glass, in particular to a three-silver low-emissivity film glass capable of subsequent processing. 【Background technique】 [0002] Triple-silver LOW-E glass (also known as triple-silver LOW-E glass) is a film product composed of multiple layers of metal or other compounds including three silver layers on the surface of the glass. Due to the low emissivity of the silver layer, the low emissivity glass has high transmittance to visible light, high reflectivity to infrared, and good thermal insulation. [0003] The film structure of ordinary three-silver low-e glass produced by vacuum magnetron sputtering is generally: glass / base dielectric combination layer / first Ag layer / first barrier layer / first interlayer dielectric combination layer / second Ag layer / Second barrier layer / Second interlayer dielectric combination layer / Third Ag layer / Third barrier layer / Upper dielectric combination layer, etc. [0004] The diel...

Claims

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Application Information

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IPC IPC(8): C03C17/36
Inventor 陈可明曾小绵崔平生
Owner CSG HOLDING
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