Double-substrate active layer structure with polysilicon layer and microcrystal silicon layer, method and device thereof

Abstract

The invention relates to a double-substrate active layer structure with a polysilicon layer and a microcrystal silicon layer, a method and a device thereof. The double-substrate active layer structure with the polysilicon layer and the microcrystal silicon layer comprises a base plate; the microcrystal silicon layer which is formed in a display area above the base plate and used as the active layer of a plurality of thin film transistors in the display area; and the polysilicon layer which is formed in a driving circuit area above the base plate and used as the active layer of a plurality of thin film transistors in the driving circuit area, wherein the grain size of the microcrystal silicon layer is less than that of the polysilicon layer. The light-emitting uniformity of an organic light-emitting diode can be improved by applying the invention.

Description

technical field [0001] The present invention relates to a thin film transistor display and its manufacturing method; more particularly, the present invention relates to a double substrate active layer structure with a polysilicon layer and a microcrystalline silicon layer and a thin film transistor display with the above structure and its manufacture method. Background technique [0002] The traditional manufacturing method of organic light-emitting diode displays is to form a buffer layer on the substrate before depositing the active layer of amorphous silicon, so that the laser annealing process (excimer laseranneal) is performed to crystallize the active layer of amorphous silicon When forming the active layer of polysilicon, it can isolate the impurities of the glass substrate from diffusing to the active layer due to the laser manufacturing process. However, when long-wavelength laser (wavelength greater than 400nm) is used in the laser annealing manufacturing process,...

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Problems solved by technology

Since the above-mentioned laser annealing manufacturing process will affect the channel quality of the subsequent fabricated thin film transistors, it will have an adverse effect on the current density passing through each organic light emitting diode unit, resulting in inconsistent luminance of the organic light emitting diode display

In order to reduce the impact of the buffer layer on the laser, to reduce the laser interference between the amorphous silicon layer and the buffer layer, the existing practice is to adjust the thickness of the buffer layer to Reduce laser interference, but the room for improvement is still limited

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