Heterojunction thermophotovoltaic cell based on Ga-In-As-Sb quarternary semiconductor

A technology of gaxin1-xas1-ysby and gax1in1-x1as1-y1sby1, which is applied in the field of heterojunction thermal photovoltaic cells, can solve the problems of high cost and difficult growth of Al-containing materials, so as to increase the open circuit voltage, improve photoelectric conversion efficiency, and improve Effect of Photogenerated Current Density

Inactive Publication Date: 2009-09-02
JILIN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the growth of Al-containing materials is relatively difficult, especially it is difficult to obtain high-quality Al-containing compound semiconductors that meet the device

Method used

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  • Heterojunction thermophotovoltaic cell based on Ga-In-As-Sb quarternary semiconductor
  • Heterojunction thermophotovoltaic cell based on Ga-In-As-Sb quarternary semiconductor
  • Heterojunction thermophotovoltaic cell based on Ga-In-As-Sb quarternary semiconductor

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Embodiment 1

[0027] Te-doped N-type GaSb polished single wafer was used as the substrate, and the net donor concentration was 5×10 17 cm -3 , the crystal orientation is (100), and the prepared structure is N-type GaSb substrate / N + Type GaSb rear confinement layer / N-type Ga 0.95 In 0.05 As 0.04 Sb 0.96 Active layer / P - Type Ga 0.8 In 0.2 As 0.18 Sb 0.82 Active layer / P + Type Ga 0.9 In 0.1 As 0.09 Sb 0.91 Restricted layer / P + Type GaSb window passivation layer of heterojunction Ga x In 1-x As 1-y Sb y Thermal photovoltaic cells.

[0028] The growth of the multilayer material structure is carried out in a low-pressure metal-organic chemical vapor deposition (MOCVD) system. The Ga, In, Sb and As sources used for growth were trimethylgallium (TMGa), trimethylindium (TMIn), trimethylantimony (TMSb) and hydrogen (H 2 ) diluted to 10% (volume percentage) of arsine (AsH 3 ), the metal-organic sources were placed in a high-precision temperature-controlled cold trap, and the so...

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Abstract

The invention belongs to the field of thermophotovoltaic technology, in particular to a high conversion efficiency heterojunction thermophotovoltaic cell based on the Ga[x]In[1-x]As[1-y]Sb[y] quarternary semiconductor matched with crystal lattices. The heterojunction thermophotovoltaic cell sequentially comprises a back electrode, an N type substrate, an N type wide bandgap Ga[x1]In[1-x1]As[1-y1]Sb[y1] active layer, a lightly doped P<-> type narrow bandgap Ga[x2]In[1-x2]As[1-y2]Sb[y2] active layer, a heavily doped P<+> type wide bandgap Ga[x3]In[1-x3]As[1-y3]Sb[y3] limiting layer and an upper electrode in the shape of a grizzly bar from top to bottom. Furthermore, a P type GaSb window passivating layer is additionally arranged between the P<+> type wide bandgap limiting layer and the upper electrode in the shape of the grizzly bar, and an N type GaSb back limiting layer is additionally arranged between the N type substrate and the N type wide bandgap active layer. The heterojunction thermophotovoltaic cell which is used for low temperature radiator thermophotovoltaic systems has the advantages of good stability and high safety coefficient, and can be applied to the fields of spaceflight, military affairs, industry, life, and the like.

Description

technical field [0001] The invention belongs to the field of thermal photovoltaic technology, in particular to a Ga x In 1-x As 1-y Sb y High conversion efficiency heterojunction thermal photovoltaic cells of quaternary semiconductor system. Background technique [0002] Thermophotovoltaic technology is a technology that directly converts photons emitted by high-temperature heat radiators into electrical energy through the photovoltaic effect of semiconductor p-n junctions. It has high output power density, high photoelectric conversion efficiency through spectrum control, quiet, portable, and no mechanical The structure and structure are simple, not prone to failure, and the power generation ratio per unit volume or unit weight is high. A complete thermo-photovoltaic system mainly includes thermal radiators, optical filters, thermo-photovoltaic cells, heat recoverers and auxiliary components. Thermal radiators and thermo-photovoltaic cells are the core components of the...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/072H01L31/0304H01L31/02H01L31/0224H01L31/0735
CPCY02E10/52Y02E10/544
Inventor 彭新村张宝林郭欣董鑫赵晓薇郑伟杜国同
Owner JILIN UNIV
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