Anti-reflecting film applied to metallurgical silicon solar cell and preparation method thereof

A technology for solar cells and anti-reflection films, which is applied to the field of anti-reflection films on the surface of solar cells and their preparation, can solve the problem that a single-layer anti-reflection film is difficult to achieve an anti-reflection effect, etc., and achieves the advantages of improving photoelectric conversion efficiency and reducing reflection. Effect

Inactive Publication Date: 2009-09-09
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under normal circumstances, it is difficult to achieve the ideal anti-reflection eff

Method used

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  • Anti-reflecting film applied to metallurgical silicon solar cell and preparation method thereof
  • Anti-reflecting film applied to metallurgical silicon solar cell and preparation method thereof
  • Anti-reflecting film applied to metallurgical silicon solar cell and preparation method thereof

Examples

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Effect test

Embodiment 1

[0021] A group of silicon wafers (200 pieces) after the four steps of conventional silicon wafer cleaning, texturing, diffusion preparation of PN junction, etching and removal of PN junction around the silicon wafer, and cleaning and removal of phosphosilicate glass were processed as follows:

[0022] 1. Heating at 350°C for 28s; 2. Using PECVD equipment, the first-stage coating is carried out in a reaction atmosphere of silane and ammonia. The flow rate of silane is 900 sccm, the flow rate of ammonia gas is 310 sccm, and the process pressure is 3.0e -1 mbar, the microwave power is 3200W, and the transmission speed of the substrate is 100cm / min.; 3. Using PECVD equipment, the second-stage coating is carried out in the reaction atmosphere of silane and ammonia. The flow rate of silane is 1550 sccm, the flow rate of ammonia gas is 280 sccm, and the process pressure for 3.0e -1 mbar, the microwave power is 3200W, and the transmission speed of the silicon wafer carrier is 100cm / mi...

Embodiment 2

[0028] A group of silicon wafers (200 pieces) after the four steps of conventional silicon wafer cleaning, texturing, diffusion preparation of PN junction, etching and removal of PN junction around the silicon wafer, and cleaning and removal of phosphosilicate glass were processed as follows:

[0029] 1. Heating at 350°C for 30s; 2. Using PECVD equipment, in the first stage of coating in the reaction atmosphere of silane and ammonia, the flow rate of silane is 880sccm, the flow rate of ammonia gas is 305sccm, and the process pressure is 3.05e -1 , the microwave power is 3200W, and the transmission speed of the silicon wafer carrier plate is 105cm / min.; 3. Using PECVD equipment, the second-stage coating is carried out in the reaction atmosphere of silane and ammonia gas, the flow rate of silane is 1500 sccm, and the flow rate of ammonia gas is 270sccm, process pressure is 3.1e -1 , the microwave power is 3200W, and the transmission speed of the silicon wafer carrier is 105cm / mi...

Embodiment 3

[0039] A group of silicon wafers (200 pieces) after the four steps of conventional silicon wafer cleaning, texturing, diffusion preparation of PN junction, etching and removal of PN junction around the silicon wafer, and cleaning and removal of phosphosilicate glass were processed as follows:

[0040] 1. Heating at 350°C for 26s; 2. Using PECVD equipment, in the first stage of coating in the reaction atmosphere of silane and ammonia, the flow rate of silane is 850 sccm, the flow rate of ammonia gas is 300 sccm, and the process pressure is 3.0e -1 mbar, the microwave power is 3250W, and the transmission speed of the substrate is 103cm / min.; 3. Using PECVD equipment, the second-stage coating is carried out in the reaction atmosphere of silane and ammonia. for 3.0e -1 mbar, the microwave power is 3250W, and the transmission speed of the silicon wafer carrier is 103cm / min.

[0041] The two coating stages are completed continuously in the same process chamber. Finally, an anti-re...

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Abstract

The invention discloses an anti-reflecting film applied to a metallurgical silicon solar cell, which is composed of two layers of films, wherein the first layer film is arranged on the surface of a silicon slice substrate of an ultra-purity metallurgical-grade polysilicon solar battery, the thickness of the first layer film is 35-50nm, and the refracting index is 2.25-2.35; the second layer film is arranged on the surface of the first layer film, the thickness of the second layer film is 40-55nm, and the refracting index is 1.95-2.05; components of the two films are both silicon nitride; the comprehensive film thickness of the two layers of films is 82-89nm, and the comprehensive refracting index is 2.03-2.12. The anti-reflecting film can obviously reduce the refracting of the surface of the battery to light, and improves the photoelectric transformation efficiency of the ultra-purity metallurgical-grade polysilicon solar cell.

Description

technical field [0001] The invention designs an anti-reflection film and a preparation method thereof, and in particular relates to an anti-reflection film applied to the surface of a solar cell and a preparation method thereof. Background technique [0002] At present, solar cell manufacturing includes the following steps: (1) silicon wafer cleaning and texturing; (2) diffusion to prepare PN junction; (3) etching to remove the PN junction around the silicon wafer; (4) cleaning and removal of phosphosilicate glass; (5) Preparation of anti-reflection film; (6) screen printing back electrode silver paste, back electric field aluminum paste, positive electrode silver paste; (7) co-firing alloying of back electrode, back field and front electrode; (8) testing and sorting. [0003] Solar-grade polysilicon and monocrystalline silicon are mostly used in industrial production, which greatly increases the cost of production. The emergence of high-purity metallurgical-grade (UMG) pol...

Claims

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Application Information

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IPC IPC(8): H01L31/0216G02B1/11H01L31/042H01L31/18G02B1/115
CPCY02E10/52Y02E10/50Y02P70/50
Inventor 王栩生赵钰雪辛国军章灵军
Owner CSI CELLS CO LTD
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