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Method for coarse wafer alignment in a lithographic apparatus

A marking and scanning path technology, applied in the field of lithography equipment, computer programs, and manufacturing semiconductor devices, can solve the problem of low accuracy

Inactive Publication Date: 2009-09-23
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Reducing the width of the scribe lines may lead to coarse alignment results with low accuracy, and thus this is undesirable when using coarse alignment methods according to the prior art

Method used

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  • Method for coarse wafer alignment in a lithographic apparatus
  • Method for coarse wafer alignment in a lithographic apparatus
  • Method for coarse wafer alignment in a lithographic apparatus

Examples

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Embodiment Construction

[0035] figure 1 A lithographic apparatus according to an embodiment of the present invention is schematically shown. The equipment includes:

[0036] - an illumination system (illuminator) IL configured to condition a radiation beam B (eg, ultraviolet (UV) radiation or extreme ultraviolet (EUV) radiation);

[0037] - a support structure (eg mask table) MT configured to support the patterning device (eg mask) MA and connected to first positioning means PM configured to precisely position the patterning device according to determined parameters;

[0038] - a substrate table (e.g. a wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W and associated with a second positioner PW configured to precisely position the substrate according to determined parameters connected; and

[0039] - a projection system (e.g. a refractive projection lens system) PS constructed to project the pattern imparted to the radiation beam B by the patterning device MA onto a tar...

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Abstract

A method for alignment of a substrate, in which the substrate includes a mark in a scribe lane, and the scribe lane extends along a longitudinal direction as a first direction. The mark has a periodic structure in the first direction. The method includes providing an illumination beam for scanning the mark in a direction perpendicular to a direction of the mark's periodic structure along a first scan path across the mark, scanning the spot of the illumination beam along a second scan path across the mark, the second scan path being parallel to the first scan path, wherein the second scan path is shifted relative to the first scan path over a first shift that corresponds to a fraction of the repeating distance of the periodic structure.

Description

technical field [0001] The invention relates to a method for coarse alignment of wafers in a lithographic apparatus. In addition, the present invention also relates to a method for manufacturing a semiconductor device. Furthermore, the invention relates to a lithographic apparatus and a computer program. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is transferred via imaging to a layer of radiation sensitive material (resist) provide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F9/00G03F7/20
CPCG03F9/7088G03F9/7069G03F9/7076G03F9/7011G03F9/7049
Inventor 帕特里克·沃纳阿法兰西斯卡·戈德弗瑞德斯·卡斯珀·碧嫩
Owner ASML NETHERLANDS BV
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