Thin film transistor

A thin film transistor and channel layer technology, applied in transistors, semiconductor devices, electrical components, etc., can solve problems such as large drain currents
CN101540340AInactive Publication Date: 2009-09-23CHUNGHWA PICTURE TUBES LTD
0 Cites 11 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
CHUNGHWA PICTURE TUBES LTD
Publication Date
2009-09-23
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a thin film transistor, which comprises a grid, a grid insulating layer, a channel layer, a source electrode and a drain electrode, wherein the grid is arranged on a substrate; the grid insulating layer is covered on the grid; the channel layer is arranged on the grid insulating layer above the grid; the longitudinal section of the channel layer can be of a wave shape; and the source electrode and the drain electrode are arranged on the channel layer; in addition, the longitudinal section of the channel layer can be flat in surface, and the source electrode and the drain electrode at two sides covered on the channel layer are in nonlinear line list structures.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a thin film transistor, and in particular to a thin film transistor with better output characteristics. Background technique

[0002] In recent years, with the maturity of optoelectronic technology and semiconductor manufacturing technology, flat panel displays (Flat Panel Displays) have flourished, and liquid crystal displays have gradually replaced them based on their advantages of low voltage operation, no radiation scattering, light weight and small size. Traditional cathode ray tube displays have become the mainstream of display products in recent years.

[0003] A general liquid crystal display is mainly composed of a thin film transistor array substrate, a color filter substrate and a liquid crystal layer located between the two substrates, wherein the thin film transistor array substrate has a plurality of pixel units arranged in a matrix, and each pixel unit includes a The thin film transistor and a pixel elec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More