LDMOS transistor and manufacturing method thereof

A technology of oxide semiconductor and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of unstable device performance, increased photolithography process, and increased cost.
CN103390645AActive Publication Date: 2013-11-13WILL SEMICON (SHANGHAI) CO LTD
10 Cites 12 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
WILL SEMICON (SHANGHAI) CO LTD
Publication Date
2013-11-13

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses an LDMOS which comprises a P-type substrate, an N-type epitaxial layer, a P trap, a first N-type doping region, a groove, a first metal layer and a source-electrode metal layer. The P trap is located in the N-type doping region, the first N-type doping region is arranged in the P trap, and the groove penetrates through the first N-type doping region, the P trap and the N-type epitaxial layer until the P-type substrate. A first oxidation layer is arranged on the side wall of the groove. The groove is filled with first polycrystalline silicon of P-type doping. The upper surface of the first polycrystalline silicon is located inside the P trap and is lower than the first N-type doping region. The first metal layer covers the upper surface of the first polycrystalline silicon and covers the first N-type doping region. The source-electrode metal layer is located on the back face of the P-type substrate. The invention further discloses a manufacturing method of the LDMOS. A source electrode is led out from the back face of the substrate instead of being originally led out from the front face of the substrate, the design area of the original source electrode region on the front face is effectively reduced, the design width of a channel in a gate region is increased, and the on resistance is reduced.
Need to check novelty before this filing date? Find Prior Art

Description

Technical field

[0001] The present invention relates to an LDMOS and a manufacturing method thereof, in particular to an LDMOS and a manufacturing method thereof with a source electrode drawn from the backside of a wafer and perfectly compatible with the existing CMOS process. Background technique

[0002] LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) has a fast switching speed and can meet high breakdown voltage applications. It can withstand higher power, higher operating frequency, and more than bipolar transistors. It is easily compatible with Bi-CMOS (Bipolar Complementary Metal Oxide Semiconductor, bipolar and complementary metal oxide semiconductor) integrated circuit technology and can form BCD (Bipolar CMOS DMOS, dual CMOS integrated circuit technology) circuit as its high-voltage unit and other advantages. Widely used, DCMOS circuits are widely used in drivers, high-frequency power amplifiers and other occasions.

[0003] LDNMOS (N-type LDMOS) manufactured us...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More