Method for realizing positioning of ZnO nanowire to field effect transistor substrate

Abstract

The invention discloses a method for realizing positioning of a ZnO nanowire to a field effect transistor substrate. The method comprises the following steps: positive photoresist and cross positive photoresist are adopted on the field effect transistor substrate, and regularly arranged crosses are formed by developing; the Ti / Au is vaporized to form a metal cross Marker and queue markers on both sides of the cross; the ZnO nanowire is stripped off from the original growth substrate by an ultrasonic ethanol hydrolysis method; and the liquid drop containing the ZnO nanowire is dropped to the center of the metal cross Marker through a dropper, and the position of the nanowire is positioned by using the metal cross Marker and the queue markers on both sides of the cross. By using the invention, the deposition and the positioning of the ZnO nanowire from the original glass substrate to the field effect transistor substrate are realized, the problem of random arrangement of the ZnO nanowire deposited on the device substrate is solved, and the accurate positioning of the ZnO nanowire is realized.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor devices, in particular to a method for realizing the positioning of ZnO nanowires to a field effect tube substrate by using a cross marker. Background technique [0002] Nanowires (including nanotubes) are one of the most advanced topics in nanotechnology and condensed matter physics research. They have superior physical properties and are the structural units for constructing nanoscale components such as lasers, sensors, field-effect transistors, light-emitting diodes, logic circuits, spintronic devices, and quantum computers. [0003] Especially semiconductor nanowires, which can not only be used as basic building blocks, but also be used to connect various nanodevices. Through in-depth research on semiconductor nanowires, it is expected to prepare electronic, photon and spin information processing devices with complex functions on a single nanowire. [0004] In addition, a vari...

AI Technical Summary

Problems solved by technology

[0008] In view of this, the main purpose of the present invention is to provide a method for positioning the ZnO nanowires to the field effect transistor substrate, so as to solve the problem that the nanowires cannot be accurately positioned after being deposited on the P-type Si sheet substrate, so that subsequent field effect transistors cannot be realized. The layout registration problem in the preparation ensures that the source and drain metal can form ohmic contact with the ZnO nanowire channel

Images