n-channel superjunction vertical double-diffused metal oxide semiconductor transistor

Abstract

An N-channel superjunction vertical double-diffused metal oxide semiconductor tube, comprising: an N-type doped silicon substrate serving as a drain region, an N-type doped silicon epitaxial layer, a primary cell region, and terminals arranged around the primary cell region area, the N-type doped silicon epitaxial layer is set on the N-type doped silicon substrate, the cell area and the terminal area are set on the N-type doped silicon epitaxial layer, and the terminal area includes the first superjunction structure and an N-type silicon-doped semiconductor region, wherein the first super junction structure includes a P-type column and an N-type column, an N-type heavily doped semiconductor region is arranged in the N-type silicon-doped semiconductor region, and the first super-junction structure A field oxide layer is provided on the N-type silicon-doped semiconductor region, and a metal layer is connected on the N-type heavily doped semiconductor region. It is characterized in that a field is provided on the first superjunction structure and the N-type silicon-doped semiconductor region. oxide layer.

Description

Technical field: [0001] The present invention relates to a silicon-made high-voltage power metal oxide semiconductor device, more precisely, to a silicon-made high-voltage super-junction vertical double-diffused metal oxide semiconductor field-effect transistor (super junction VDMOS, namely super junction VDMOS, hereinafter referred to as Abbreviated as super junction VDMOS). Background technique: [0002] At present, power devices are more and more widely used in daily life, production and other fields, especially power metal oxide semiconductor field effect transistors, because they have faster switching speed, smaller drive current, and wider safe operating area , so it has been favored by many researchers. Nowadays, power devices are developing rapidly in the direction of increasing operating voltage, increasing operating current, reducing on-resistance and integration. Among many power metal oxide semiconductor field effect transistor devices, especially in vertical p...

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Problems solved by technology

[0003] For the terminal structure of traditional power devices, in addition to making field plate and other terminal structures on the surface of bulk silicon, a drift layer with a lower concentration is used inside the bulk silicon to ensure the withstand voltage level. However, due to the special principle of super-junction devices The concentration of the drift region is high, and the thickness of the drift layer is also small. The terminal structure of ordinary high-voltage power devices is no longer suitable for super-junction structure devices.

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