Chip of three-dimensional MEMS geophone and preparation method thereof
A geophone and chip technology, applied in seismic signal receivers, instruments, welding equipment, etc., can solve the problems of inconvenient detection of three-dimensional seismic signals, uneconomical and other problems, and achieve the effect of high resolution, high fidelity and large dynamic range
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Embodiment 1
[0029] Such as figure 1 , 2 As shown, in two pieces of 20×20×0.5mm 2 Fabricate a three-dimensional MEMS geophone chip array on silicon wafers 1 and 2:
[0030] (1) Use a piece of 20×20×0.5mm 2 The silicon wafer is used as the substrate A2. After cleaning, three grooves are formed by photolithography. The three grooves are arranged at right angles and orthogonally. The depth of the grooves in the X and Z axis directions is 20-40 μm. The groove is 3μm deep, such as image 3 Shown in a; Sputter again to form a layer of 0.5 μm gold, and the wires and fixed electrodes 7 formed by stripping, such as image 3 as shown in b;
[0031] (2) By spin-coating polyimide 3 μm organic sacrificial layer for micromechanics, a cantilever beam model is formed on the sacrificial layer by photolithography, and a 2.5 μm thick silicon cantilever beam material is deposited by magnetron sputtering to remove the sacrificial material After layering, a cantilever beam 6 and a quality block 8 are form...
Embodiment 2
[0039] Such as figure 1 , 2 As shown, in two pieces of 20×20×0.5mm 2 Fabricate a three-dimensional MEMS geophone array on silicon wafers 1 and 2:
[0040] (1) Use a piece of 20×20×0.5mm 2 The silicon wafer is used as the substrate A2, and three grooves are formed by photolithography after cleaning, among which the depth of the grooves in the X and Z axis directions is 30 μm, and the depth of the grooves in the Y axis direction is 3 μm. image 3 Shown in a; Sputter again to form a layer of 0.5 μm gold, and the wires and fixed electrodes 7 formed by stripping, such as image 3 as shown in b;
[0041] (2) By spin-coating an organic sacrificial layer (polyimide) of 4 μm for micromechanics, a cantilever beam model is formed on the sacrificial layer by photolithography, and a silicon cantilever beam material with a thickness of 2.5 μm is deposited by magnetron sputtering, After removing the sacrificial layer, a cantilever beam 6 and a mass block 8 are formed, such as image 3 ...
Embodiment 3
[0049] Such as figure 1 , 2 As shown, in two pieces of 20×20×0.5mm 2 Fabricate a three-dimensional MEMS geophone array on silicon wafers 1 and 2:
[0050] (1) Use a piece of 20×20×0.5mm 2 A silicon wafer is used as the substrate A2, and three grooves are formed by photolithography after cleaning, among which the depth of the grooves in the X and Z axis directions is 40 μm, and the depth of the grooves in the Y axis direction is 3 μm. image 3 Shown in a; Sputter again to form a layer of 0.5 μm gold, and the wires and fixed electrodes 7 formed by stripping, such as image 3 as shown in b;
[0051] (2) By spin-coating polyimide 4 μm organic sacrificial layer for micromechanics, a cantilever beam model is formed on the sacrificial layer by photolithography, and a 2.5 μm thick silicon cantilever beam material is deposited by magnetron sputtering to remove the sacrificial material. After layering, a cantilever beam 6 and a quality block 8 are formed, such as image 3 as shown...
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