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Resistance variable element, resistance variable storage device and resistance variable device

A technology of variable resistance and memory devices, which is applied in the field of variable resistance devices, variable resistance memory devices and variable resistance devices, and can solve the problems of miniaturization limit of FLASH memory, etc.

Inactive Publication Date: 2009-10-28
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For such a request, it can be said that there is a limit to the miniaturization of the FLASH memory using the existing floating gate.

Method used

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  • Resistance variable element, resistance variable storage device and resistance variable device
  • Resistance variable element, resistance variable storage device and resistance variable device
  • Resistance variable element, resistance variable storage device and resistance variable device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0101] [structure]

[0102] figure 1 It is a schematic diagram showing an example of the structure of the variable resistance element according to the first embodiment of the present invention.

[0103] Such as figure 1 As shown, the variable resistance element 10 of this embodiment includes a substrate 1, a lower electrode 2 (first electrode) formed on the substrate 1, a variable resistance layer 3 formed on the lower electrode 2, and a variable resistance layer 3 formed on the variable resistance layer 3. on the upper electrode 4 (second electrode). The lower electrode 2 and the upper electrode 4 are electrically connected to the variable resistance layer 3 , respectively. In addition, the upper electrode 4 may be a first electrode, and the lower electrode 2 may be a second electrode.

[0104] The substrate 1 is made of, for example, a silicon substrate.

[0105] The lower electrode 2 and the upper electrode 4 can be selected from, for example, Ag (silver), Au (gold), P...

Embodiment 1

[0142] On the silicon substrate, a lower electrode (20 μm×20 μm in size) made of Pt was formed by sputtering to a thickness of 0.2 μm. Prepare NiFe 2 o 4 and Fe 3 o 4 The targets are discharged simultaneously by sputtering, and a mask and lithography are used to form a layer with (Ni X Fe 1-X )Fe 2 o 4 The resistance change layer of the spinel structure represented by the chemical formula (size is 10 μm × 10 μm: area 100 μm 2 ). The substrate temperature when forming the variable resistance layer was 300°C. The size of the contact portion between the lower electrode and the variable resistance layer is 2 μm×2 μm (area 4 μm 2 ). The thickness of the variable resistance layer was 100 nm. Furthermore, on the variable resistance layer, an upper electrode (2 μm×2 μm in size) made of Pt was formed by sputtering using a mask and lithography to a thickness of 0.2 μm to obtain a variable resistance element. The size of the contact portion between the upper electrode and the...

Embodiment 2

[0150] In Example 2, the resistance variable element was formed in the same manner as in Example 1 except for the difference in parameters, and writing and reading were performed.

[0151] That is, in Example 2, the voltage applied to each target was adjusted so that the (Ni X Fe 1-X )Fe 2 o 4 The value of X is 0.65. The value of X was verified by combining two kinds of the RBS (Rutherford backscattering) method and the fluorescent X-ray analysis method. As a result of the verification, the value of X is 0.65. The resistivity was measured by the 4-terminal 4-probe method. The resistivity of the variable resistance layer of Example 2 was 10 Ωcm.

[0152]It was confirmed that the resistance variable element of this example has non-volatility in which the resistance value does not change even when the power supply is turned off. In addition, when the magnitude of the current flowing when the voltage pulse was applied was measured, it was 1 mA or less. Therefore, it can be...

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Abstract

A resistance variable element (10), a resistance variable storage device and a resistance variable device are provided with a first electrode(2); a second electrode (4); and a resistance variable layer (3), which is arranged between the first electrode (2) and the second electrode (4) and is electrically connected with the first electrode (2) and the second electrode (4). The resistance variable layer (3) includes a material, which is expressed by a chemical formula of (NiXFe1-X)Fe2O4, where X is 0.35 or more but not more than 0.9, and has a spinel structure. The resistance variable element, the resistance variable storage device and the resistance variable device have such characteristics that the electrical resistance between the first electrode (2) and the second electrode (4) lowers when a first voltage pulse having a first voltage is applied between the first electrode (2) and the second electrode (4) and that the electrical resistance between the first electrode (2) and the second electrode (4) increases when a second voltage pulse having a second voltage with a polarity different from that of the first voltage is applied between the first electrode (2) and the second electrode (4).

Description

technical field [0001] The present invention relates to a variable resistance element, a variable resistance memory device, and a variable resistance device. More specifically, it relates to a resistance variable element whose resistance changes according to an applied voltage pulse, and a resistance variable memory device and a resistance variable device using the resistance variable element. Background technique [0002] With the development of digital technology in electronic equipment, in order to store data such as images, there are demands for larger capacity of non-volatile resistance variable elements, reduction of writing power, faster writing / reading time, and longer life very high. With respect to such a request, it can be said that there is a limit in miniaturization of the FLASH memory using the existing floating gate. [0003] As the first prior art that is likely to meet the above requirements, the use of perovskite materials (for example, Pr (1-x) Ca X Mn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/10G11C13/00H01L45/00H01L49/00
CPCG11C13/0069H01L45/147G11C2013/0083H01L45/145G11C2213/79H01L27/2436H01L45/04H01L45/1625G11C2013/0073H01L45/1233G11C13/00H10B63/30H10N70/20H10N70/8836H10N70/026H10N70/826
Inventor 村冈俊作小佐野浩一藤井觉
Owner PANASONIC CORP
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