Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method for processing ITO membrane and electric device

A processing method and laser technology, applied in metal processing equipment, welding equipment, laser welding equipment and other directions, can solve the problems of time-consuming inflexibility, high investment cost, environmental pollution and so on

Active Publication Date: 2009-11-04
HANS CNC SCI & TECH
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1) High investment cost;
[0005] 2) More steps are required for processing, which is time-consuming and inflexible;
[0006] 3) Due to the need to use chemicals, it will pollute the environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for processing ITO membrane and electric device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In the following embodiments, the laser processing method is adopted without using chemicals and avoiding pollution to the environment.

[0023] combined reference figure 1 , a processing method for an ITO film, comprising the steps of: placing a substrate 20 with an ITO film 10 on a processing table 30, the ITO film 10 facing the table 30 and setting a gap 40 between the ITO film 10 and the table 30; The side where the substrate 20 is located emits a laser 50 to process the ITO film 10 .

[0024] The substrate 20 may be glass, polyethylene terephthalate (polyethylene terephthalate, PET for short) and the like.

[0025] A gap 40 is provided between the ITO film 10 and the table top 30 , for example, the substrate 20 is padded with a jig to keep a certain distance between the table top 30 and the ITO film 10 , which is convenient for dust suction in the gap during laser processing. For example, a through hole is provided on the table top 30 so that the through hole com...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
wavelengthaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for processing ITO membrane, comprising the followings steps: a substrate attached with the ITO membrane is placed on a processing table, the ITO membrane faces the processing table and clearance is arranged between the ITO membrane and the processing table; laser is transmitted from one side where the substrate is located to process the ITO membrane. As laser processing is adopted, no chemical medicine is needed, thus avoiding polluting the environment; in addition, the purpose of rapid preparation of the membrane can be realized so long as the ITO membrane is processed by the laser technology; furthermore, the invention also provides an electric device containing transparent electrodes prepared by the method for processing the ITO membrane.

Description

【Technical field】 [0001] The invention relates to the field of processing technology of transparent conductive films, in particular to a processing method of an ITO film and an electronic device made by using the processing method of the ITO film. 【Background technique】 [0002] Tin-doped indium oxide (Indium Tin Oxide, referred to as ITO) material is an n-type semiconductor material, due to its high electrical conductivity, high visible light transmittance, high mechanical hardness and chemical stability, it is a liquid crystal display ( LCD), plasma display (PDP), electroluminescent display (EL / OLED), touch screen (Touch Panel), solar cells and the most commonly used materials for transparent electrodes of other electronic instruments. According to different applications, ITO films need to be processed into different shapes. [0003] Traditional ITO film processing generally uses masks and chemicals for etching. There are some problems in this processing process: [0004...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/00
Inventor 高云峰翟学涛高子丰雷群
Owner HANS CNC SCI & TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More