Welding method of copper target blank and copper alloy backing plate

A welding method and copper alloy technology, applied in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problems of easy oxidation, affecting the welding effect of target components, etc., to prevent oxidation, strong resistance to heat deformation, cost reduction effect

Active Publication Date: 2009-11-18
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF0 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem to be solved by the present invention is to provide a welding method of a copper target blank and a copper alloy back plate, which solves the problem that in the diffusion welding

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Welding method of copper target blank and copper alloy backing plate
  • Welding method of copper target blank and copper alloy backing plate
  • Welding method of copper target blank and copper alloy backing plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The following are the process steps and welding results of diffusion welding between 99.995% high-purity Cu target blank and Cu alloy backplane:

[0036] (1) Surface processing of the target blank and the back plate: machine the surface of the Cu target blank and the surface of the Cu alloy back plate to make them bright, especially to make the surface finish of the two contact surfaces reach 0.2um.

[0037] (2) Chemical cleaning of the target blank and the back plate: the surface of the Cu target blank and the Cu alloy back plate is cleaned with hydrochloric acid to remove soluble impurities on the surface. The volume ratio of hydrogen chloride to water in hydrochloric acid is 1:5.

[0038] (3) Put the target blank and back plate into the vacuum bag:

[0039] First put the Cu target material blank and the Cu alloy back plate into the thin-walled vacuum sheath welded and formed, the vacuum sheath is 1.0mm ~ 2.0mm low carbon steel or copper alloy welded and formed, and ...

Embodiment 2

[0046] The following are the process steps and welding results of diffusion welding between 99.99% high-purity Cu target blank and Cu alloy backplane:

[0047] (1) Surface processing of the target blank and the back plate: Machining the surface of the Cu target blank and the surface of the Cu alloy back plate to make them bright, especially to make the surface finish of the two contact surfaces reach 3.2um.

[0048] (2) Chemical cleaning of the target blank and the back plate: the surface of the Cu target blank and the Cu alloy back plate is cleaned with hydrochloric acid to remove soluble impurities on the surface. The volume ratio of hydrogen chloride to water in hydrochloric acid is 1:5.

[0049] (3) Put the target blank and back plate into the vacuum bag:

[0050] First put the Cu target material blank and the Cu alloy back plate into the thin-walled vacuum sheath welded and formed, the vacuum sheath is 1.0mm ~ 2.0mm low carbon steel or copper alloy welded and formed, and...

Embodiment 3

[0057] The following are the process steps and welding results of diffusion welding between 99.99% high-purity Cu target blank and CU alloy backplane:

[0058] (1) Surface processing of the target blank and the back plate: machine the surface of the Cu target blank and the surface of the CU alloy back plate to make them bright, especially to make the surface finish of the two contact surfaces reach 1.6um.

[0059] (2) Chemical cleaning of the target blank and the back plate: the surface of the Cu target blank and the CU alloy back plate is cleaned with hydrochloric acid to remove soluble impurities on the surface. The volume ratio of hydrogen chloride to water in hydrochloric acid is 1:5.

[0060] (3) Put the target blank and back plate into the vacuum bag:

[0061] First put the Cu target blank and the CU alloy back plate into a thin-walled vacuum sheath welded and formed, the vacuum sheath is 1.0mm ~ 2.0mm low carbon steel or copper alloy welded and formed, and then vacuumi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Smoothnessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a welding method of a target and a backing plate, comprising the following steps of: providing a copper target blank and a copper alloy backing plate; putting the copper target blank and the copper alloy backing plate in a vacuum can and then conveying to welding equipment; adopting hot isostatic pressing process to conduct diffusion welding, and welding the copper target blank on the copper alloy backing plate to form a target module; and after welding, conducting air cooling, removing the vacuum can and taking out the target module. On one hand, the welding method adopts the vacuum can to separate the target and the backing plate from air, thus effectively preventing the metal surface from being oxidized when in welding and reducing the vacuum equipment cost; on the other hand, the welding method utilizes the hot isostatic pressing process to conduct diffusion welding, thus further improving the bonding strength between the copper target blank and the copper alloy backing plate and leading to small bending deformation after bonding.

Description

technical field [0001] The invention relates to the manufacture of sputtering targets in the field of semiconductors, in particular to a welding method for a copper target blank and a copper alloy back plate. Background technique [0002] In the semiconductor industry, a target assembly is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. At present, metal tantalum (Ta) or copper (Cu) is mainly used as a target material to be coated by physical vapor deposition (PVD) and form a barrier layer, and magnetron sputtering is used in the sputtering process; it needs to have sufficient strength and thermal conductivity , Copper alloy material with high conductivity is used as the backplane material. [0003] The high-purity copper target blank and the co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B23K20/00
Inventor 姚力军潘杰王学泽周友平刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap