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Manufacturing method of backplane and backplane

A manufacturing method and backplane technology, which are applied to manufacturing tools, ion implantation plating, welding equipment, etc., can solve the problems of low quality of substrate coating, unable to meet the requirements of sputtering process, short service life of backplane, etc. Realize the effect of large area welding, small welding seam and high welding bonding rate

Active Publication Date: 2016-08-03
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem solved by the present invention is that the service life of the backplane in the prior art is relatively short, and the coating quality of the substrate is not high enough to meet the increasingly demanding sputtering process

Method used

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  • Manufacturing method of backplane and backplane
  • Manufacturing method of backplane and backplane
  • Manufacturing method of backplane and backplane

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Experimental program
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Effect test

Embodiment Construction

[0048] The inventors found and analyzed that the service life of the backplane in the prior art is short, and the quality of the substrate coating is not high, and the reason why it cannot meet the increasingly demanding sputtering process is:

[0049] The impact of high-pressure cooling water on the back plate of the target assembly can effectively accelerate the heat dissipation of the target. -9 Under the high vacuum of Pa, and the back of the back plate is impacted by cooling water for a long time, a huge pressure difference is formed on the upper and lower sides of the target assembly, which makes a depression on the back of the back plate. The use of the back plate The service life is short, and the depression of the back plate will also cause the front of the corresponding target to protrude upwards, therefore, it will also affect the service life of the target assembly. What's more, due to the protrusion on the front of the target, it will directly cause The deviation ...

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Abstract

The invention provides a back plate and a manufacturing method thereof. The manufacturing method includes: providing first and second portions of the back plate; forming a solder layer at the bottom of a first cavity of the first portion; placing the second portion into the first cavity in which the solder layer is formed, and allowing the second cavity side of the second portion to contact with the solder layer; welding the sidewall of the second portion to the sidewall of the first cavity by means of an electron beam welding process; after performing the electron beam welding process, soldering the second cavity side of the second portion to the bottom of the first cavity by means of a soldering process to form the back plate. The first portion is provided with the first cavity used for accommodating the second portion; the second portion is provided with at least one second cavity. The invention further provides the back plate. Through the application of the manufacturing method of the back plate, the service life of the back plate can be prolonged, substrate coating quality can be improved, and the increasing requirements of the sputtering process are met.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a backplane manufacturing method and the backplane. Background technique [0002] In the vacuum sputtering process, the target assembly is composed of a target meeting the sputtering performance and a back plate combined with the target and having a certain strength. The back plate not only plays a supporting role when the target assembly is assembled to the sputtering base, but also has the effect of conducting heat, and is used for heat dissipation of the target in the magnetron sputtering process. [0003] In the process of magnetron sputtering, the working environment of target components is relatively harsh. Its temperature is high (such as 300°C to 500°C), the target component is in a high-voltage electric field and a magnetic field with high magnetic field strength, and the front surface is at 10 -9 Under the high-vacuum environment of Pa, it is bombarded by va...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K28/02C23C14/35
CPCB23K1/0056B23K1/008B23K2101/40C23C14/35
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽杨广
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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