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A kind of tungsten-titanium alloy target material welding method

A technology of tungsten-titanium alloy and welding method, which is applied in welding equipment, welding/welding/cutting articles, metal processing, etc., can solve the problems of target component connection failure, sputtering process inability, solder melting, etc., to increase effective Large area, good plasticity, and the effect of improving welding strength

Active Publication Date: 2016-04-27
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low melting point (156°C) and low strength (less than 20MPa) of indium solder, the solder will melt when the sputtering power is high, resulting in failure of the connection of the target components, resulting in the failure of the sputtering process

Method used

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  • A kind of tungsten-titanium alloy target material welding method
  • A kind of tungsten-titanium alloy target material welding method
  • A kind of tungsten-titanium alloy target material welding method

Examples

Experimental program
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Effect test

Embodiment 1

[0035] A tungsten-titanium alloy target with a diameter of 300 mm is welded to a copper alloy back plate with a diameter of 310 mm, wherein the composition of the tungsten-titanium alloy is W-10% Ti, and the composition of the copper alloy back plate is Cu-0.7% Cr.

[0036] First, the welding surface of the tungsten-titanium target is sandblasted, with a roughness of 4.3 μm, which is uniform. The welding surface of the copper alloy backplane is CNC lathe machined with V-shaped grooves, with a depth of 0.4mm and a groove spacing of 0.5mm.

[0037] The middle layer is made of grade 1050 industrial pure aluminum with a thickness of 2mm.

[0038] Put the processed copper alloy back plate, 1050 aluminum sheet, and tungsten-titanium target into the 6061 aluminum alloy sheath in turn, and place them in the 8×10 -3 Electron beam sealing welding in Pa vacuum.

[0039] The package that has been sealed and welded is welded in a hot isostatic pressing furnace at a temperature of 500°C a...

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Abstract

The invention discloses a welding method of a tungsten-titanium alloy target, and belongs to the technical field of semiconductor production. The welding method comprises the following steps: firstly, the tungsten-titanium alloy target and a copper alloy back plate are provided; an aluminum or aluminum alloy layer is formed on the welded surface of the tungsten-titanium target; and then, the tungsten-titanium alloy target is connected to the copper alloy back plate by adopting a diffusion welding method. The method uses the aluminum or aluminum alloy layer to realize the low-temperature welding of the tungsten-titanium alloy target, improves the welding strength of the tungsten-titanium target, prevents the rupture of the target, and enables the target to be suitable for a high-power sputtering process.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a welding method for a tungsten-titanium alloy target. Background technique [0002] In the production of large-scale integrated circuits, the target assembly is composed of a target that meets the sputtering requirements and a backplane. The back plate has a certain strength, provides support when the target assembly is installed on the sputtering machine, and has good thermal and electrical conductivity. Tungsten-titanium alloy film is used as a diffusion barrier in semiconductor manufacturing, and is formed by physical vapor deposition (PVD) from a tungsten-titanium alloy target. The tungsten-titanium alloy target is prepared by powder sintering. It has high hardness, high brittleness, and is easy to break. It needs to be welded with a copper back plate with high strength, high conductivity, and high thermal conductivity to process it into a ta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K20/00B23K20/233B23K20/24
CPCB23K20/021B23K20/22B23K20/24B23K2101/40B23K2103/18
Inventor 徐学礼丁照崇何金江李勇军刘冬青张玉利熊晓东
Owner GRIKIN ADVANCED MATERIALS
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