Welding method of copper target blank and copper alloy backing plate

A welding method and copper alloy technology, applied in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problems of easy oxidation and affect the welding effect of target components, so as to prevent oxidation and prevent the target from detaching from the back plate. , the effect of high bonding tightness

Active Publication Date: 2012-09-05
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem to be solved by the present invention is to provide a welding method of a copper target blank and a copper alloy back plate, which solves the problem that in the diffusion welding process, the contact surface of the copper target blank and the copper alloy back plate is easily oxidized in a heated state, which affects the obtained target. Welding effect of material components

Method used

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  • Welding method of copper target blank and copper alloy backing plate
  • Welding method of copper target blank and copper alloy backing plate
  • Welding method of copper target blank and copper alloy backing plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The following are the process steps and welding results of diffusion welding between 99.995% high-purity Cu target blank and Cu alloy backplane:

[0038] (1) Surface processing of the target blank and the back plate: machine the surface of the Cu target blank and the surface of the Cu alloy back plate to make them bright, especially to make the surface finish of the two contact surfaces reach 0.2um.

[0039] (2) Chemical cleaning of the target blank and the back plate: the surface of the Cu target blank and the Cu alloy back plate is cleaned with hydrochloric acid to remove soluble impurities on the surface. The volume ratio of hydrogen chloride to water in hydrochloric acid is 1:5.

[0040] (3) Put the target blank and back plate into the vacuum bag:

[0041] First put the Cu target material blank and the Cu alloy back plate into the thin-walled vacuum sheath welded and formed, the vacuum sheath is 1.0mm ~ 2.0mm low carbon steel or copper alloy welded and formed, and ...

Embodiment 2

[0048] The following are the process steps and welding results of diffusion welding between 99.99% high-purity Cu target blank and Cu alloy backplane:

[0049] (1) Surface processing of the target blank and the back plate: Machining the surface of the Cu target blank and the surface of the Cu alloy back plate to make them bright, especially to make the surface finish of the two contact surfaces reach 3.2um.

[0050] (2) Chemical cleaning of the target blank and the back plate: the surface of the Cu target blank and the Cu alloy back plate is cleaned with hydrochloric acid to remove soluble impurities on the surface. The volume ratio of hydrogen chloride to water in hydrochloric acid is 1:5.

[0051] (3) Put the target blank and back plate into the vacuum bag:

[0052] First put the Cu target blank and the Cu alloy back plate into a thin-walled vacuum sheath welded and formed, the vacuum sheath is 1.0mm ~ 2.0mm low carbon steel or copper alloy welded and formed, and then vacuu...

Embodiment 3

[0059] The following are the process steps and welding results of diffusion welding between 99.99% high-purity Cu target blank and CU alloy backplane:

[0060] (1) Surface processing of the target blank and the back plate: machine the surface of the Cu target blank and the surface of the CU alloy back plate to make them bright, especially to make the surface finish of the two contact surfaces reach 1.6um.

[0061] (2) Chemical cleaning of target blanks and back plates: use hydrochloric acid to clean the surface of Cu target blanks and CU alloy back plates to remove soluble impurities on the surfaces. The volume ratio of hydrogen chloride to water in hydrochloric acid is 1:5.

[0062] (3) Put the target blank and back plate into the vacuum bag:

[0063] First put the Cu target blank and the CU alloy back plate into a thin-walled vacuum sheath welded and formed, the vacuum sheath is 1.0mm ~ 2.0mm low carbon steel or copper alloy welded and formed, and then vacuumize to 10 -3 T...

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Abstract

The invention relates to a welding method of a target and a backing plate, comprising the following steps of: providing a copper target blank and a copper alloy backing plate; putting the copper target blank and the copper alloy backing plate in a vacuum can and then conveying to welding equipment; adopting hot isostatic pressing process to conduct diffusion welding, and welding the copper targetblank on the copper alloy backing plate to form a target module; and after welding, conducting air cooling, removing the vacuum can and taking out the target module. On one hand, the welding method adopts the vacuum can to separate the target and the backing plate from air, thus effectively preventing the metal surface from being oxidized when in welding and reducing the vacuum equipment cost; onthe other hand, the welding method utilizes the hot isostatic pressing process to conduct diffusion welding, thus further improving the bonding strength between the copper target blank and the copperalloy backing plate and leading to small bending deformation after bonding.

Description

Technical field [0001] The invention involves the manufacturing of sputtering targets in the semiconductor field, especially the welding method of copper target blank and copper alloy back plate. Background technique [0002] In the semiconductor industry, the target component is composed of a target that is in line with sputtering performance and a backplane with a certain intensity with a target material.The backplane can be assembled in the target component to the sputter base Taichung to play a supporting role, and has the effect of conducting calories.At present, the main use of metal (TA) or copper (CU) is coated by the physical gas phase deposition method (PVD) and forms a blocking layer as the target. The magnetic control sputter is used during sputtering;Copper alloy materials with high conductivity as the backplane material. [0003] After processing and welding the high -purity copper target blanking and copper alloy back plates to make the target component used by the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K20/00
Inventor 姚力军潘杰王学泽周友平刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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