Structure and method for welding target material and backboard

Abstract

The invention relates to a structure and a method for welding a target material and a backboard, wherein the method for welding the target material and the backboard comprises the following steps: proThe invention relates to a structure and a method for welding a target material and a backboard, wherein the method for welding the target material and the backboard comprises the following steps: providing a tantalum target material; forming an intermediate layer on the welding surface of the tantalum target material; and performing welding operations on the intermediate layer through a hot isostviding a tantalum target material; forming an intermediate layer on the welding surface of the tantalum target material; and performing welding operations on the intermediate layer through a hot isostatic pressing method so as to weld a copper or copper alloy backboard to the tantalum target material. The method can perform extensive welding to effectively prevent metals form being oxidized and imatic pressing method so as to weld a copper or copper alloy backboard to the tantalum target material. The method can perform extensive welding to effectively prevent metals form being oxidized and improve the bonding strength between the tantalum target material and the copper or the copper alloy backboard, thus the tantalum target material cannot break away in the sputtering process so as to perprove the bonding strength between the tantalum target material and the copper or the copper alloy backboard, thus the tantalum target material cannot break away in the sputtering process so as to perform sputter coating normally.form sputter coating normally.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding structure and method of a target material and a back plate. Background technique [0002] In the manufacture of large-scale integrated circuits, the target component is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base station, and has the effect of conducting heat. At present, tantalum (Ta) targets are used for physical vapor deposition (PVD) coating to form a barrier layer. Magnetron sputtering is used for tantalum targets in the sputtering process; at the same time, it needs to use high strength, but has high thermal conductivity and electrical conductivity. The copper material is used as the back plate material; after the tantalum target and the back plate material are...

AI Technical Summary

Problems solved by technology

[0006] However, the direct fusion welding method has the following disadvantages: 1) Due to the large difference in the melting points of the two materials (the melting point of copper is 1084°C, and the melting point of tantalum is 2996°C), the fusion welding equipment cannot realize large-area butt welding

2) When the temperature of the tantalum target and the copper material backplane is heated above 200°C, the oxidation rate is very fast, and the atoms on the contact surface of the two metals cannot effectively diffuse, so that the joint strength of the two cannot meet the requirements

[0007] Using tin or indium solder brazing method, due to the low melting point of the solder (less than 250°C) and low bonding strength (less than 70Mpa), the solder will melt due to heat during the sputtering process of the tantalum target, which will cause the target sputtering to fail.

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