Inductance coupling coil and plasma processing device adopting same

Abstract

The invention discloses an inductance coupling coil which comprises a first coil branch circuit and a second coil branch circuit mutually connected in parallel, wherein the first coil branch circuit comprises an inner circle winding part, the second coil branch circuit comprises an outer circle winding part, and the first coil branch circuit also comprises an adjustable capacitor connected with the inner circle winding part in series. In addition, the invention also discloses a plasma processing device which comprises a reaction chamber, wherein the upper part of the reaction chamber is provided with a medium window, and the inductance coupling coil is arranged above the medium window; and the first end of the inductance coupling coil is connected with a radio-frequency power supply by a radio-frequency matcher, and the second end of the inductance coupling coil is grounded so as to obtain uniformly distributed plasma in the reaction chamber. The inductance coupling coil and the plasmaprocessing device not only can generate the more uniformly distributed plasma at a stable electric discharge stage, but also can more easily realize plasma ignition at a plasma ignition stage.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an inductively coupled coil. In addition, the present invention also relates to a plasma processing device using the inductively coupled coil. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. At present, in the field of processing / handling of semiconductor devices, especially in the manufacturing process of IC (Integrated circuit, integrated circuit) or MEMS (Micro Electromechanical System, microelectromechanical system) devices, it is often necessary to use such methods as plasma etching, Plasma processing technology for deposition or other processes, and these technologies are usually realized by means of...

AI Technical Summary

Problems solved by technology

Although the two-step method can meet both the RF power requirements required for ignition and the RF power requirements required for processing / processing, in practical applications, during the process of changing the RF power from high to low, the RF power occurs Changes lead to changes in the plasma environment, that is, changes in the reaction conditions

Thus, changes in reaction conditions will eventually lead to undesired or unpredictable processing / handling results

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