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Method and equipment for high-temperature liquid phase heating crystallization

A high-temperature liquid, crystallization technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of poor uniformity, complex process, high cost, and achieve good uniformity, simplified process, and good heat conduction.

Active Publication Date: 2011-08-31
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods also have the disadvantages of high cost, poor uniformity, complicated process and the use of a large amount of toxic and flammable and explosive gases in the process.

Method used

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  • Method and equipment for high-temperature liquid phase heating crystallization
  • Method and equipment for high-temperature liquid phase heating crystallization
  • Method and equipment for high-temperature liquid phase heating crystallization

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] figure 1 A schematic diagram showing the structure of the high-temperature liquid-phase crystallization equipment. exist figure 15 in is the liquid tank made of high temperature resistant alumina ceramics, the heater 6 for heating is arranged below the tank to heat the liquid tank. Fill liquid phase metal 1 in this groove, what use here is high-purity tin. In order to easily push the substrate out of the liquid tank 5 in the future, the amount of the liquid phase metal is just controlled to be slightly higher than the edge of the liquid tank inlet and outlet, and the surface tension of the metal will not overflow the height. A substrate 2 to be crystallized is placed on the liquid phase metal 1. This substrate is made of a substrate 4. Here, borosilicate glass is used, and an amorphous semiconductor layer 3 is arranged on the substrate. In this embodiment In is the amorphous silicon layer. The whole device is placed in a high vacuum system to ensure that the metal a...

Embodiment 2

[0039] figure 2 In this example, the structure in which the amorphous semiconductor layer is directly in contact with the high-temperature liquid-phase metal during high-temperature liquid-phase crystallization is shown. exist figure 2 Middle 5 is a liquid tank made of high-temperature-resistant alumina ceramics, and a heater 6 for heating is arranged below the tank to heat the liquid tank. Liquid metal 1 is contained in this groove, what use here is to be mixed with 0.1% to 10% high-purity nickel and high-purity tin mixture. In order to easily push the substrate out of the liquid tank in the future, the amount of the liquid phase metal is just controlled to be slightly higher than the edge of the inlet and outlet of the liquid tank, and the surface tension of the metal will not overflow the height. A substrate 2 to be crystallized is placed on the liquid phase metal 1. This substrate is made of a substrate 4. Here, borosilicate glass is used. There is one layer of amorpho...

Embodiment 3

[0041] image 3 The structure of this embodiment is shown when the crystallization of the substrate is moved to realize a planar polycrystalline or single crystal film. exist image 3 Middle 5 is a liquid tank made of high-temperature-resistant alumina ceramics, and a heater 6 for heating is arranged below the tank to heat the liquid tank. Liquid metal 1 is contained in this groove, what use here is to be mixed with 0.1% to 10% high-purity nickel and high-purity tin mixture. In order to easily push the substrate out of the liquid tank in the future, the amount of the liquid phase metal is just controlled to be slightly higher than the edge of the inlet and outlet of the liquid tank, and the surface tension of the metal will not overflow the height. In this embodiment, a linear heating pipe 7 and a pair of heat-insulating heat shields 8 are placed on both sides of the linear heating pipe 7 in the liquid holding tank 5 so that a high-temperature liquid phase zone is formed bet...

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Abstract

The invention relates to a method and equipment for high-temperature liquid phase heating crystallization. The equipment is provided with a tank capable of accommodating high-temperature metal liquid; the high-temperature metal liquid or nonmetal liquid is accommodated in the tank; a high-temperature region can be inserted in the liquid; and the surface of the high-temperature metal liquid or thenonmetal liquid is provided with a substrate needing crystallizing, the surface of the substrate is provided with a substrate needing crystallizing formed by amorphous thin films, and the substrate is provided with a driving system driving to continuously crystallize the amorphous films. The method comprises the following steps: putting the substrate into the tank and making the plate float on the high-temperature liquid; under the condition of vacuum, or inert gas or reducing gas, heating the high-temperature liquid to between 500 and 1,000 DEG C and crystallizing for 1 minute to 20 hours; and reducing the temperature of the high-temperature liquid to between 250 and 300 DEG C, and taking the substrate out. The method and the equipment can ensure the flatness, non-deformation, even heating and high heat transfer efficiency of the substrate.

Description

technical field [0001] The present invention relates to crystals for liquid crystal display (LCD), organic light-emitting diode (OLED), electronic paper (e-paper) and thin film transistor (TFT) for three-dimensional integrated electric semiconductor devices and semiconductor thin films for solar cells and optoelectronic devices The method and the corresponding equipment structure. Background technique [0002] Silicon-based TFT devices, solar cells and other optoelectronic devices with glass substrates have become the mainstream of current development. TFT substrates made of them have been widely used in liquid crystal displays, organic light-emitting displays, electronic paper and other various In displays and control devices, solar cells, and optoelectronic devices, their performance is closely related to the degree of crystallization of the film, especially in Si films, as the degree of crystallization of the film changes from amorphous silicon to polysilicon, its mobilit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/02C30B33/02H01L21/324H01L21/477C30B29/06
Inventor 张志林张建华张浩蒋雪茵张良俞东斌李俊张小文
Owner SHANGHAI UNIV