Light emitting diode (LED) chip with vertical structure adopting electric conduction polymer transferring and manufacturing method thereof

Abstract

The invention discloses a light emitting diode (LED) chip with a vertical structure adopting electric conduction polymer transferring and a manufacturing method thereof, the method has the following steps: evaporating an ITO transparent conductive layer on the LED epitaxial wafer of a sapphire substrate; evaporating Al, Ag or Pt as a reflecting layer on the transparent conductive layer; coating conductive adhesive with high heat conductivity on the reflecting layer; bonding the LED epitaxial wafer on the high heat conductivity substrate by the conductive adhesive; adopting inductively coupled plasma (ICP) or reactive ion etching (RIE) n-GaN, an active layer and p-GaN; etching off the undoped GaN layer by adopting KOH solution and coarsing the n-GaN surface; evaporating n side electrode and p side electrode. The proposal improves the heat dissipation efficiency of products and the comprehensive performance of the LED chip.

Description

technical field [0001] The invention relates to a method for preparing a GaN-based power light-emitting diode (LED) chip with a vertical structure, in particular to a method for transferring a GaN-based LED epitaxial wafer on a sapphire substrate to a material with high thermal conductivity by using a high thermal conductivity and conductive polymer , preparing an LED chip with an upper and lower electrode structure and a preparation method thereof. Background technique [0002] GaN-based blue and blue-green light-emitting diodes (LEDs) are widely used in instrument indicators, large-size LED backlights, electronic billboards, and various lighting equipment. Due to the limitations of GaN crystal structure and growth conditions, sapphire is mainly selected as the substrate when growing GaN-based LED epitaxial layers. Due to the poor electrical and thermal conductivity of sapphire, the manufacturing process of GaN-based LEDs is complicated, the heat dissipation is poor, and t...

AI Technical Summary

Problems solved by technology

In the wafer bonding process, metals and insulating transparent polymers are mainly used as bonding materials at present, but the use of these materials as bonding layers has the following problems: (1) the use of metal bonding is not conducive to the subsequent slicing process ( 2) Insulating transparent polymers cannot be used to manufacture vertically structured LEDs due to their inability to conduct electricity

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