Preparation method of non temperature-sensibility manganese oxide magneto-resistor material

A technology of manganese oxide and sensitivity, which is applied in the field of preparation of manganese oxide magnetoresistance materials, can solve problems such as application limitations, and achieve the effects of temperature insensitivity, good bonding, and good mechanical properties

Inactive Publication Date: 2010-01-13
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, this type of low-field-enhanced magnetoresistance material shows a large magnetoresistance value only at a relatively low temperatur

Method used

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  • Preparation method of non temperature-sensibility manganese oxide magneto-resistor material
  • Preparation method of non temperature-sensibility manganese oxide magneto-resistor material
  • Preparation method of non temperature-sensibility manganese oxide magneto-resistor material

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0033] Embodiment two

[0034] This example is basically the same as Example 1, except that the temperature of each calcination in step a is 1100°C, and the time is 5 hours; the metal tin powder added in step b is 5% of the weight of the precursor powder; The pressure of compression molding during bonding is 100Mpa, and the temperature during curing is 160°C.

Example Embodiment

[0035] Embodiment Three

[0036] This example is basically the same as Example 1, except that the temperature of each calcination in step a is 1200°C, and the time is 20 hours; the metal tin powder added in step b is 15% of the weight of the precursor powder; The pressure of compression molding during bonding is 300Mpa, and the temperature during curing is 120°C.

[0037] The type of curing agent used in the present invention and the compounding amount of the epoxy resin are mature prior art, such as: ethylenediamine, diethylenetriamine, dipropylenetriamine, trimethylhexamethylene Diamine, and its matching amount with epoxy resin is also a mature prior art, which can be directly obtained from the instruction manual of epoxy resin.

[0038] The silane coupling agent used in the present invention can adopt any commercially available silane coupling agent, such as KH-550 silane coupling agent, KH-560 silane coupling agent, DL-602 silane coupling agent, etc. .

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PUM

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Abstract

The invention relates to a preparation method of non temperature-sensibility manganese oxide magneto-resistor material, the specific steps are as follows: a. La2O3, SrCO3 and MnO2 are prepared according to atomic ratio of La0.7Sr0.3MnO3, the raw material is ground, three-time calcination and the grinding after calcination are carried out to obtain precursor powder; b. 5-15 percent of metal tin powder is added in the precursor powder to obtain mixed powder; c. the mixed powder is mixed with coupling agents of which the weight is 1 percent of the precursor powder; d. binding material which is 4 percent of the precursor powder by weight and curing agents are sequentially dissolved in acetone, the mixed powder is added, evenly mixed and then the mixture is dried and is formed by pressing at 100-800MPa, and is solidified at 120-160 DEG C. The preparation method has simple preparation process, low energy consumption and low cost, and the prepared manganese oxide magneto-resistor material has high magneto-electricity resistance in the wide temperature range and downfield, and the magneto-electricity resistance is insensitive to the temperature.

Description

technical field [0001] The invention relates to a preparation method of a non-temperature-sensitive manganese oxide magnetoresistance material. Background technique [0002] Magnetoresistance materials have a magnetoresistance effect, and their resistance changes significantly under the action of an external magnetic field. Magnetoresistance MR is usually used to represent the magnitude of the magnetoresistance effect of magnetoresistance materials, and MR is defined as: MR=(ρ 0 -ρ) / ρ 0 ×100%, where ρ 0 Represents the resistance of the material when no external magnetic field is applied, and ρ represents the resistance of the material after the external magnetic field is applied. Magnetoresistive materials can be used in magnetic recording, high-sensitivity detectors, sensors, and optical switches. [0003] Perovskite manganese oxide (La 1-x m x MnO 3 , M is Sr, Ca, Pr, Co, etc.) materials are a class of magnetoresistance functional materials with a wide range of uses...

Claims

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Application Information

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IPC IPC(8): C04B35/622C04B35/01
Inventor 羊新胜杨立芹赵勇吕莉潘敏
Owner SOUTHWEST JIAOTONG UNIV
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