Soft support cantilever beam type silicon micro-piezoelectric microphone chip and preparation method thereof

A cantilever beam, electro-microphone technology with applications in the fabrication/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, material selection for piezoelectric or electrostrictive devices Equal direction, can solve the problem of low microphone sensitivity

Inactive Publication Date: 2010-02-10
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the microphone is vibrating, the piezoelectric l

Method used

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  • Soft support cantilever beam type silicon micro-piezoelectric microphone chip and preparation method thereof
  • Soft support cantilever beam type silicon micro-piezoelectric microphone chip and preparation method thereof
  • Soft support cantilever beam type silicon micro-piezoelectric microphone chip and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Embodiment 1, adopt preparation method of the present invention to prepare a piezoelectric microphone chip, its steps are as follows:

[0069] 1) Clean the silicon substrate 1

[0070] Cleaning the silicon substrate 1 with an acid cleaning solution and an alkaline cleaning solution respectively, and then rinsing it with deionized water;

[0071] 2) Oxide layer formation by thermal oxidation 2

[0072] On the silicon substrate 1, use a thermal oxidation furnace to oxidize the oxide layer with a thickness of 0.2 μm, and remove the oxide layer on the reverse side, so that a thermal oxide film layer 2 with a thickness of 0.2 μm is formed on the front side of the substrate 1;

[0073] 3) Low-pressure chemical vapor deposition of the first silicon nitride film layer 3

[0074] A first silicon nitride film layer 3 with a thickness of 0.5 μm on the thermal oxide film layer 2 and a third silicon nitride mask layer 6 with a thickness of 0.5 μm on the reverse side of the silicon...

Embodiment 2

[0103] Embodiment 2, using the preparation method of the present invention to prepare a novel piezoelectric microphone chip, the steps are as follows:

[0104] 1) Clean the silicon substrate 1

[0105] Cleaning the silicon substrate 1 with an acid cleaning solution and an alkaline cleaning solution respectively, and then rinsing it with deionized water;

[0106] 2) Oxide layer formation by thermal oxidation 2

[0107] On the silicon substrate 1, use a thermal oxidation furnace to oxidize the oxide layer with a thickness of 0.2 μm, and remove the oxide layer on the reverse side, so that a thermal oxide film layer 2 with a thickness of 0.2 μm is formed on the front side of the substrate 1;

[0108] 3) Low-pressure chemical vapor deposition of the first silicon nitride film layer 3

[0109] A first silicon nitride film layer 3 with a thickness of 0.5 μm on the thermal oxide film layer 2 and a third silicon nitride mask layer 6 with a thickness of 0.5 μm on the reverse side of t...

Embodiment 3

[0136] Embodiment 3, using the preparation method of the present invention to prepare a novel piezoelectric microphone chip, the steps are as follows:

[0137] 1) Clean the silicon substrate 1

[0138] Cleaning the silicon substrate 1 with an acid cleaning solution and an alkaline cleaning solution respectively, and then rinsing it with deionized water;

[0139] 2) Oxide layer formation by thermal oxidation 2

[0140] On the silicon substrate 1, use a thermal oxidation furnace to oxidize the oxide layer with a thickness of 0.2 μm, and remove the oxide layer on the reverse side, so that a thermal oxide film layer 2 with a thickness of 0.2 μm is formed on the front side of the substrate 1;

[0141] 3) Low-pressure chemical vapor deposition of the first silicon nitride film layer 3

[0142] A first silicon nitride film layer 3 with a thickness of 0.5 μm on the thermal oxide film layer 2 and a third silicon nitride mask layer 6 with a thickness of 0.5 μm on the reverse side of t...

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Abstract

The invention relates to a soft support cantilever beam type silicon micro-piezoelectric microphone chip which comprises a silicon substrate with a square conical hole which is small at the top and big at the bottom in the center, a square compound vibration membrane which consists of a thermal oxidation membrane layer, a first silicon nitride membrane layer, a silicon dioxide membrane layer and asecond silicon nitride membrane layer is covered on the front surface of the silicon substrate, and a first silicon nitride mask layer and a second silicon nitride mask layer with square holes in thecenters thereof are sequentially covered on the back surface; three of four sides of the square compound vibration membrane respectively are etched to form a vertical narrow slot penetrating the square compound vibration membrane, and the vertical projection of each vertical narrow slot is positioned on the inner side of the edge of the square hole in the front surface of the silicon substrate; alower electrode, a piezoelectric membrane and an upper electrode are sequentially deposited on the square compound vibration membrane; one side of the upper electrode is coincided with or near to theside without the narrow slot of the square vibration membrane; and a polyimide membrane which is patterned is deposited on various parts positioned on the front surface of the silicon substrate. Thecantilever beam structure can prevent sound leakage phenomenon and has the advantages of high sensitivity, anti-sound leakage and the like.

Description

technical field [0001] The invention relates to the field of silicon micro-piezoelectric microphones, in particular to a silicon micro-piezoelectric microphone chip with an anti-sound leakage soft support cantilever beam and a preparation method thereof. Background technique [0002] Silicon micro-microphones mainly include piezoelectric and capacitive types. Silicon micro-piezoelectric microphones are composed of piezoelectric layers, vibrating membranes, and metal electrodes. Compared with the silicon microcapacitor microphone, the piezoelectric microphone has a simple structure and does not require a bias voltage; it has low impedance and can be used as a transmitter to achieve both reception and transmission; it can be applied to miniature microphones, ultrasonic imaging, and hydrophones. But because the microphone is vibrating, the sensitivity of the microphone is relatively low due to the small strain of the piezoelectric layer. In order to increase the strain of the ...

Claims

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Application Information

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IPC IPC(8): H01L41/083H01L41/18H01L41/22H03H9/15H01L41/25
Inventor 李俊红汪承灏刘梦伟徐联
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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