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Device and method for growing terbium gallium garnet (TGG) crystal by pulling method

A terbium gallium garnet and pulling method technology is applied in the field of devices for preparing large-size, high-quality TGG crystals, which can solve the problems of crystal growth temperature fluctuations, affecting the normal growth of crystals, and difficulty in ensuring stoichiometry, and achieving the effect of temperature field. Small, the effect of reducing the effect of volatilization on components

Inactive Publication Date: 2010-02-17
UNIONLIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the powder raw material at room temperature is added, it will inevitably absorb heat from the inner crucible, causing large fluctuations in the crystal growth temperature, thereby affecting the normal growth of the crystal
[0009] Zheng Yanqing et al. (Chinese Patent Application No.: 200410089075.8) made an improvement, using the rising method of the outer crucible to supplement the material reduced by the growth of the inner crucible, which can effectively prevent the temperature fluctuation caused by the melting of the material, but the volatilization of the outer crucible itself , making it difficult to ensure the stoichiometry of the supplementary material itself

Method used

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  • Device and method for growing terbium gallium garnet (TGG) crystal by pulling method
  • Device and method for growing terbium gallium garnet (TGG) crystal by pulling method

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Experimental program
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Embodiment 1

[0029] Embodiment 1: use commercial high-purity raw material, take by weighing high-purity (greater than 99.99%) Tb2O3 and Ga2O3 two kinds of mixtures by molar ratio Tb2O3: Ga2O3=3: 5.05 and Tb2O3: Ga2O3=3: 5.15, on the blender Mix well for 24 hours, then compact it into a block, and then calcinate the block at 1000°C for 10 hours to form terbium gallate. Grind part of the block into powder as supplementary material. use figure 1 The growth device shown is used for growth. Put the 3:5.05 block in the raw material supply crucible of the three-crucible system with a diameter of 140mm, put the 3:5.15 block in the growth crucible with a diameter of 100mm, and pull it by pulling method Terbium gallate crystals are grown through processes such as neck, shoulder equal diameter, and finishing. The supply material is put into the transition chamber first, after being vacuumed and filled with argon, it is slowly added to the supply crucible. The molten raw material enters the growth ...

Embodiment 2

[0030] Embodiment 2: use commercial high-purity raw material, take by weighing high-purity (greater than 99.99%) Tb2O3 and Ga2O3 two kinds of mixtures by molar ratio Tb2O3: Ga2O3=3: 5.15 and Tb2O3: Ga2O3=3: 5.30, on the blender Mix well for 24 hours, then compact it into a block, and then calcinate the block at 1200°C for 10 hours to form terbium gallate. Grind part of the block into powder as supplementary material. use figure 1The growth device shown is used for growth. Put the 3:5.05 block in the raw material supply crucible of the three-crucible system with a diameter of 140mm, put the 3:5.15 block in the growth crucible with a diameter of 100mm, and pull it by pulling method Terbium gallate crystals are grown through processes such as neck, shoulder equal diameter, and finishing. The supply material is put into the transition chamber first, after being vacuumed and filled with argon, it is slowly added to the supply crucible. The molten raw material enters the growth z...

Embodiment 3

[0031] Embodiment 3: use commercial high-purity raw material, take by weighing high-purity (greater than 99.99%) Tb2O3 and Ga2O3 two kinds of mixtures by molar ratio Tb2O3: Ga2O3=3: 5.05 and Tb2O3: Ga2O3=3: 5.30, on the blender Mix well for 24 hours, then compact it into a block, and then calcinate the block at 1400°C for 10 hours to form terbium gallate. Grind part of the block into powder as supplementary material. use figure 2 The growth device shown is used for growth. Put the 3:5.05 block in the raw material supply crucible of the three-crucible system with a diameter of 140mm, put the 3:5.15 block in the growth crucible with a diameter of 100mm, and pull it by pulling method Terbium gallate crystals are grown through processes such as neck, shoulder equal diameter, and finishing. The supply material is put into the transition chamber first, after being vacuumed and filled with argon, it is slowly added to the supply crucible. The molten raw material enters the growth...

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Abstract

The invention provides a device and a device for growing a terbium gallium garnet (TGG) crystal by a pulling method, and relates to the field of crystal growth. The device mainly comprises a weighing device, a rotating device, a heating device and an opening three-crucible. The TGG crystal grows on a preparation device through raw material preparation, first material feeding and supplemental material growing. The device and the method have the advantages that a melting and heat absorbing process of the supplemental material has small effect on a temperature field of a crystal growth area so as to effectively reduce the influence of volatilization on components due to the fact that melt is at high temperature for long time.

Description

Technical field: [0001] The invention relates to the field of crystal growth, in particular to a device and method for preparing large-sized, high-quality TGG crystals. Background technique: [0002] Currently, semiconductor lasers and optical amplifiers are very sensitive to reflected light from connectors, splices, filters, etc., and cause performance degradation. Therefore, an optical isolator is required to block the reflected light. An optical isolator is an optical passive device that only allows light to pass in one direction and blocks light in the opposite direction. The light reflected by the optical fiber echo can be well isolated by the optical isolator, and the isolation degree represents the ability of the optical isolator to isolate (block) the echo. In coherent optical long-distance optical fiber communication systems, an optical isolator is installed at intervals to reduce power loss caused by stimulated Brillouin scattering. Optical isolators play an imp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/28
Inventor 柳祝平袁新强黄小卫
Owner UNIONLIGHT TECH