Antioxidative bubble generation furnace and preparation method thereof

Abstract

The invention discloses an antioxidative bubble generation furnace and a preparation method thereof. The antioxidative bubble generation furnace is characterized by comprising a furnace body, wherein the furnace body is internally provided with a tungsten-molybdenum inner reflective screen; and an antioxidative film layer is coated on the tungsten-molybdenum inner reflective screen. The preparation method comprises the following steps of: evenly grinding zirconium dioxide powder, and forging and pressing the zirconium dioxide powder by a tablet press to form a zirconium dioxide slice; placing the zirconium dioxide slice on an electron beam copper target of an electron beam evaporation coating apparatus to coat a layer of zirconium dioxide film on the tungsten-molybdenum plate used for preparing the inner reflective screen of a bubble generation furnace; and preparing the inner reflective screen by using the plate. The invention aims to provide the antioxidative bubble generation furnace which is simple in structure and can effectively reduce the oxidation and consumption of the inner reflective screen at high temperature so as to prolong the service life and reduce operation cost. The method disclosed by the invention is simple, has small influence on a temperature field and growth of sapphire, is reliable and is easy to popularize.

Description

technical field [0001] The invention relates to an anti-oxidation foaming furnace, and also relates to a method for preparing the anti-oxidation foaming furnace. Background technique [0002] Sapphire (α-Al 2 o 3 ), also known as white gem, has good optical, mechanical, chemical and electrical properties, and is widely used in microwave tube media, waveguide laser cavity, precision bearings, infrared military devices, high-intensity laser window materials and cooling plates for liquid crystal display projectors At the same time, sapphire can be used as a substrate material for integrated circuits, used in the LED industry and microelectronic circuits, etc. It is a good substitute material for high-priced gallium and used in the production of ultra-high-speed integrated circuits. [0003] At present, the main preparation methods of sapphire mainly include Kyropoulos method, inverted mold method, heat exchange method, pulling method, flame method and crucible drop method, et...

AI Technical Summary

Problems solved by technology

[0004] There is still a big gap between our country and advanced countries in the preparation of sapphire single crystal and the production of furnace body. There are still big problems in the design of furnace body and vacuum, and the reflective screen is also easily oxidized. The internal reflection screen is seriously consumed at high temperature, and its service life is short, which increases the operating cost of the enterprise