Near-infrared reflective transparent conductive film and preparation method thereof

A transparent conductive film, near-infrared technology, applied in cable/conductor manufacturing, chemical instruments and methods, conductive layers on insulating carriers, etc., can solve the problems of metal films with low near-infrared reflection efficiency and weak visible light transmission performance, Achieve the effect of easy deposition system, simple method and operation of deposition system

Inactive Publication Date: 2010-03-03
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a near-infrared reflective transparent conductive film and a preparation method thereof for the problems of low near-infrared reflection efficiency of a single transparent conductive oxide (TCO) film and weak metal film visible light transmittance

Method used

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  • Near-infrared reflective transparent conductive film and preparation method thereof
  • Near-infrared reflective transparent conductive film and preparation method thereof
  • Near-infrared reflective transparent conductive film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1: the preparation method of Cu / AZO near-infrared reflective transparent conductive film

[0033] Clean the glass substrate and place it on the sample holder in the reaction chamber of the magnetron sputtering device, with the substrate deposition surface facing down, which can effectively prevent the contamination of the substrate surface by granular impurities, and the vacuum degree of the reaction chamber is pumped to 3× 10 -3 Pa, with Cu metal as the target material and pure Ar as the sputtering gas into the reaction chamber, the metal Cu layer was deposited by DC reactive magnetron sputtering. The gas pressure is 1.0Pa, the sputtering power is 120W, and the substrate temperature is normal temperature to carry out deposition and growth. The film thickness is determined by the growth time, monitored in real time by an oscillating film thickness monitor, and accurately measured by an ellipsometer.

[0034] After the sputtering of the metal Cu layer is com...

Embodiment 2

[0037] Embodiment 2: the preparation method of AZO / Cu / AZO multilayer transparent conductive film

[0038] Clean the glass substrate and place it on the sample holder in the reaction chamber of the magnetron sputtering device, with the substrate deposition surface facing down, which can effectively prevent the contamination of the substrate surface by granular impurities, and the vacuum degree of the reaction chamber is pumped to 3× 10 -3 Pa, with the (Zn+Al) alloy containing 4% Al as the target material, with pure Ar and pure O 2 As the sputtering gas was input into the reaction chamber, the transparent AZO layer was deposited by DC reactive magnetron sputtering. Ar:O 2 =12:1, the gas pressure is 1.0Pa, the sputtering power is 140W, and the substrate temperature is normal temperature, and deposition and growth are carried out. The thickness of the transparent AZO layer is 30nm.

[0039] After the first transparent ZnO layer is sputtered, Cu metal is used as the target mate...

Embodiment 3

[0043] Embodiment 3: Cu (7.5nm) / AZO (60nm) annealing

[0044] The near-infrared reflective transparent conductive film of the Cu (7.5nm) / AZO (60nm) structure obtained in Example 1 is annealed in a vacuum environment, and the annealing vacuum degree is 3 × 10 -3 Pa, the annealing time is 45 minutes, and the annealing temperature is 400°C.

[0045] The visible light transmission spectrum and optical reflection spectrum of the near-infrared reflective transparent conductive film of Cu(7.5nm) / AZO(60nm) structure after annealing are as follows: image 3 and 4 shown. The photoelectric performance index of the thin film structure is as follows:

[0046] Resistivity

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Abstract

The invention discloses a near-infrared reflective transparent conductive film which is a multi-layer film consisting of a metal Cu layer and an AZO layer alternatively deposited on an underlay, and prepared by DC magnetron sputtering. The method is simple and easy to be operated, and is beneficial to industrialization. The prepared near-infrared reflective transparent conductive film has the characteristics of high conductance visible light and highly transparent infrared high reflection. Moreover, the concentration of electron carriers is above 6.0 x 10<21>cm<-3>; and the average transmittance of a visible light area is more than 70 percent and the average near-infrared reflective rate is more than 60 percent, which reaches the technical requirements of the near-infrared reflective films. The resistivity of the films is not higher than 3x10<-4> Omega.cm. The near-infrared reflective transparent conductive film has broad application prospect in shading type reflective structures and photoelectric devices.

Description

technical field [0001] The invention relates to a near-infrared reflective transparent conductive film and a preparation method thereof, in particular to a multilayer structure film containing aluminum-doped zinc oxide and metal Cu, belonging to the field of optoelectronic information functional materials. Background technique [0002] As an important optoelectronic information material, transparent conductive oxide (TCO) has certain reflectivity to infrared light. Among such materials, compared with indium tin oxide (ITO) and tin oxide (SnO2), zinc oxide (ZnO) has the advantages of being cheap, non-toxic, and stable in a hydrogen plasma environment, and is one of the most promising materials. Hope to replace the material of ITO. By doping Al, the electrical conductivity of ZnO can be increased by three to five orders of magnitude, and the infrared reflection performance can be improved to a certain extent. However, the ZnO:Al(AZO) thin films reported domestically and inte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B13/00B32B15/01C23C14/35C23C14/06C23C14/18
Inventor 吕建国别勋叶志镇
Owner ZHEJIANG UNIV
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