Pixel unit structure of ultraviolet image sensor and preparation method thereof

Abstract

The invention discloses a pixel unit of an ultraviolet image sensor and a preparation method thereof. The pixel unit of the sensor comprises a substrate; two thin film transistors are integrated on the substrate, wherein one thin film transistor is a drive transistor comprising a gate electrode, a gate medium, an active layer, a source / drain electrode, a light shielding layer and a passivation layer, while the other thin film transistor is a detection transistor comprising the gate electrode, the gate medium, the active layer, the source / drain electrode and the passivation layer; the gate electrode of the drive transistor is connected with a row scanning line of the image sensor, while the drain electrode of the drive transistor is connected with a column data wire of the image sensor; and the drain electrode of the detection transistor is connected with the source electrode of the drive transistor, while the source electrode of the detection transistor is connected to the ground or connected to the row scanning line of the next row; and the gate electrode of the detection transistor is connected to the ground or biased. Different from a conventional single crystal semiconductor device, the pixel unit of the ultraviolet image sensor has stronger flexibility and lower cost, and considerably improved resolution and sensibility.

Description

technical field [0001] The invention relates to solid-state image sensing technology, in particular to a pixel unit structure of an ultraviolet image sensor and a preparation method thereof. Background technique [0002] Ultraviolet detection technology is widely used in both military and civilian applications. Its applications mainly include disaster alarm under weak daytime light conditions, aerial remote sensing monitoring of organic pollution, high-energy physics research and space detection, satellite ultraviolet communication, military photoelectric countermeasures and infrared / ultraviolet dual-band guidance, etc. High-sensitivity ultraviolet detection generally uses ultraviolet-sensitive photomultiplier tubes and similar vacuum devices, as well as solid-state image sensors represented by ultraviolet-enhanced silicon photodiodes. Compared with solid-state image sensors, vacuum devices have disadvantages such as large volume and high operating voltage; while silicon de...

AI Technical Summary

Problems solved by technology

The photoelectric conversion devices of the above-mentioned ultraviolet image sensor pixels are all diode structures, and their sensitivity and resolution are very limited.

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