Preparation method of critical material for absorbing layer of thin film solar cell

A technology for solar cells and key materials is applied in the field of preparation of key materials for absorption layers of thin-film solar cells, and can solve the problems of inability to meet the requirements for preparation of absorption layers of thin-film solar cells, uneven distribution of element concentrations, and large differences in composition, and the like. The effect of easy control of element ratio, uniform composition and low cost

Inactive Publication Date: 2010-03-10
LIUZHOU BAIRENTE ADVANCED MATERIALS +1
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Problems solved by technology

[0005] CuAlS 2 , CuAlSe 2 , CuInS 2 , CuInSe 2 , Cu(InGa)Se 2 , Cu(InGa)S 2 , Cu(AlGa)S 2 , Cu(AlGa)Se 2 , Cu(InAl)S 2 , Cu(InAl)Se 2 The materials are all synthesized by compound method, that is, Cu 2 Se compounds and In 2 Se 3 Compound solid-phase synthesis of CuInSe 2 Due to the small contact area between particles, the solid-state synthesis material has a much smaller solid-state diffusion coefficient than that in the liquid phase, resulting in a large compositional difference between the material particles (grains) prepared by the solid-state synthesis method. , resulting in uneven element concentration distribution, low film quality during sputtering, and unable to meet the actual preparation needs of the absorbing layer of thin film solar cells that are sensitive to the composition ratio

Method used

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  • Preparation method of critical material for absorbing layer of thin film solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Put Cu powder, In block, and Se block with a purity of 99.98% in a molar ratio of Cu:In:Se=1:1:2, and put them into an autoclave lined with alumina ceramics. -3 Close the autoclave under Pa vacuum condition.

[0022]The temperature of the autoclave was adjusted to 1050° C. for 2 hours, and then slowly cooled to room temperature within 8 hours. The prepared block was taken out from the autoclave and then ball-milled, and the powder was sieved into 400-mesh grade to obtain CuInSe 2 Powder, powder purity greater than 99.9%.

[0023] Put the prepared powder into a mold with a diameter of 76mm and press it in a hot-press sintering furnace at 850°C and 150MPa, and then process it into a target with a diameter of 70mm. The target density can reach 99.1%.

Embodiment 2

[0025] Put Cu powder with a purity of 99.995%, In block and S block in a ratio of 400g according to the molar ratio of Cu:In:S=1:1:2, and then put them into a reaction tank lined with zirconia ceramics. -3 Close the reaction tank under Pa vacuum condition.

[0026] The reaction tank sealed under vacuum was adjusted to a temperature of 1010° C. for 8 hours, and then slowly cooled to room temperature within 8 hours. The prepared block was taken out from the reaction tank and ball milled, and the powder was sieved into -200 mesh grade to obtain CuInS 2 Powder, powder purity greater than 99.99%.

[0027] Put the prepared powder into a mold with a diameter of 70mm and press it in a hot-press sintering furnace under the conditions of 860°C and 110MPa, and then process it into a target with a diameter of 60mm. The density of the target can reach 99.2%.

Embodiment 3

[0029] Put Cu powder, Al powder, and Se blocks with a purity of 99.98% in a molar ratio of Cu:Al:Se=1:1:2 to 700g, put them into a reaction kettle lined with alumina ceramics, and fill the The autoclave was sealed with pressured argon.

[0030] The reaction kettle filled with argon was adjusted to a temperature of 1100° C. for 2.5 hours, and then slowly cooled to room temperature within 8 hours. The prepared block was taken out from the reactor and then ball-milled, and the powder was sieved into -300 mesh grade to obtain CuAlSe 2 Powder, powder purity greater than 99.9%.

[0031] Put the prepared powder into a mold with a diameter of 320mm and press it in a hot-press sintering furnace under the conditions of 870°C and 70MPa to process it into a target with a diameter of 300mm, and the target density can reach 98.9%.

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Abstract

The invention relates to a preparation method of critical material for an absorbing layer of a thin film solar cell. The critical material is CuM(1-2x)R2(1+x), wherein M is selected from one of Al andIn, or selected from two of Al, In and Ga, R is selected from S or Se, and the value of x is -0.2 to 0.1; the state of material is powder or block target material. The preparation method of the materials is as follows: synthesizing the blocks of the materials in a vacuum closed container or in a closed container charged with argon, nitrogen or helium gas having the pressure lower than atmospherepressure; crushing the blocks to obtain the required powder; and finally synthesizing the required block target material in a hot-pressing furnace. The method is a pure element method liquid phase synthesis technique, has wide applicability, accurate proportioning, low cost, high quality of prepared target materials, compactness of powder material reaching more than 99.9%, and compactness of blocktarget material reaching more than 98.9%.

Description

【Technical field】 [0001] The present invention relates to a kind of preparation method of the key material used for absorbing layer of thin-film solar cell, particularly relate to following sulfide or selenide used for absorbing layer of thin-film solar cell: CuAl (1-2x) S 2(1+x) , CuAl (1-2x) Se 2(1+x) , CuIn (1-2x) S 2 (1+x) , CuIn (1-2x) Se 2(1+x) , Cu(InGa) (1-2x) Se 2(1+x) , Cu(InGa) (1-2x) S 2(1+x) , Cu(AlGa) (1-2x) S 2(1+x) , Cu(AlGa) (1-2x) Se 2(1+x) , Cu(InAl) (1-2x) S 2(1+x) and Cu(InAl) (1-2x) Se 2(1+x) The preparation method, the value of x is -0.2 to 0.1, and the state of the prepared material is powder or block target. 【Background technique】 [0002] CuAlS 2 , CuAlSe 2 , CuInS 2 , CuInSe 2 , Cu(InGa)Se 2 , Cu(InGa)S 2 , Cu(AlGa)S 2 , Cu(AlGa)Se 2 , Cu(InAl)S 2 , Cu(InAl)Se 2 Etc. is the light-absorbing layer material of thin-film solar cells, which has the advantages of strong radiation resistance and stable working performance. The...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216
CPCY02P70/50
Inventor 黄小珂谢元锋伍祥武吕宏陈进中王玉民苏家红何焕全廖春图
Owner LIUZHOU BAIRENTE ADVANCED MATERIALS
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