Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Mixed phosphate and caustic alkali solution for preparing monocrystal silicon textured surfaces

A technology of orthophosphate and mixed solution, which is applied in crystal growth, chemical instruments and methods, post-processing details, etc., can solve problems such as uneven pyramid size and chromatic aberration on the surface of silicon wafers, and achieve good consistency and uniformity on the surface of silicon wafers Good performance and low cost

Inactive Publication Date: 2010-03-17
EOPLLY NEW ENERGY TECH
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of this invention is to provide a kind of mixed solution of orthophosphate and caustic alkali that is used for the monocrystalline silicon textured surface preparation, and it can solve the pyramid size inhomogeneous, silicon chip that existing monocrystalline silicon textured etching solution causes. There are defects such as color difference on the surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mixed phosphate and caustic alkali solution for preparing monocrystal silicon textured surfaces

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Reference figure 1 , This specific embodiment adopts the following technical scheme: 210g sodium orthophosphate (Na 3 PO 4 ), 240g sodium hydroxide (NaOH), 1500mL isopropanol were added to 30L deionized water, stirred well, mixed uniformly, and added to 80°C. Then put the cut, non-textured monocrystalline silicon wafer with an area of ​​125mm×125mm into the solution for etching. The etching time is 25 minutes. The quality of each monocrystalline silicon wafer before and after the etching is poor (the amount of thinning) ) Is about 0.5g. The resulting suede pyramid is uniform in size and the surface of the silicon wafer is uniform.

[0013] Take every 50 silicon wafers as a batch and add them to the above solution for etching and texturing. After each batch of silicon wafers is etched, before the next batch of silicon wafers is etched and texturing, 25g of hydrogen must be added to the etching solution. Sodium oxide and 200 mL of isopropanol. In this embodiment, 16 batch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a mixed phosphate and caustic alkali solution for preparing monocrystal textured surfaces, and relates to the technical field of preparation of solar cells, in particular to preparation of textured surfaces in production technology of monocrystal silicon solar cells. The mixed phosphate and caustic alkali solution is prepared from phosphates, caustic alkali and isopropanol.The solution overcomes the defects of uneven pyramid size, chromatic aberration on the surface of silicon wafers and the like which are caused by the prior monocrystal silicon etching corrosive solution. The solution uses the phosphates instead of silicates to obtain a different monocrystal silicon etching corrosive solution. Practice proves that the solution can be used for preparing textured-surface monocrystal silicon wafers with even size and uniform surfaces.

Description

Technical field: [0001] The invention relates to the technical field of solar cell preparation, in particular to the preparation of texture in the production technology of monocrystalline silicon solar cells, and in particular to a mixed solution of orthophosphate and caustic for preparing monocrystalline silicon texture. Background technique: [0002] Improving the ability of solar cells to absorb sunlight is an important means to improve their photoelectric conversion efficiency. The preparation of the textured surface is one of the main methods to reduce the light reflection on the surface of the monocrystalline silicon wafer and increase the light absorption. The mechanism by which monocrystalline silicon texture reduces surface light reflection can be expressed as follows. Monocrystalline silicon wafers exhibit anisotropic corrosion in the etching solution, that is, the corrosion rates of the (100) plane and the (111) plane are different, and many tiny pyramids are formed o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B33/10
Inventor 屈盛余银祥韩增华
Owner EOPLLY NEW ENERGY TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products