Method of preparing catalytic material for indium hydroxide thin film with controllable shape and thickness

A technology of indium hydroxide and catalytic materials, applied in the direction of catalyst activation/preparation, metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, etc., which can solve secondary pollution of semiconductor materials, low catalytic efficiency, production Complicated methods and other issues, to achieve the effect of mild conditions, good catalytic activity, and a wide range of applications

Inactive Publication Date: 2010-04-07
NORTHEAST FORESTRY UNIVERSITY
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Problems solved by technology

[0003] The present invention in order to solve the existing semiconductor material TiO used for photocatalytic oxidation technology 2 The production method is complicated, and the semiconductor material TiO is produced 2 Low catalytic efficiency and the use of powdered semiconductor materials are likely to cause secondary pollution, and a preparation method for indium hydroxide thin film catalytic materials with controllable morphology and thickness is provided

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  • Method of preparing catalytic material for indium hydroxide thin film with controllable shape and thickness
  • Method of preparing catalytic material for indium hydroxide thin film with controllable shape and thickness
  • Method of preparing catalytic material for indium hydroxide thin film with controllable shape and thickness

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specific Embodiment approach 1

[0008] Specific Embodiment 1: In this embodiment, the indium hydroxide thin film catalytic material with controllable morphology and thickness is prepared by the following method: 0.5-8g of urea, 0.5-2g of indium nitrate and 100-150mL of water are uniformly mixed and placed in the reaction Then put the glass plate into the reactor, then put the reactor into the oil bath for reflux reaction for 12~26h, control the temperature of the oil bath reflux device to 60~100℃, that is to realize the indium hydroxide film Preparation of catalytic materials.

[0009] This embodiment can adjust the OH released by urea in the solution by controlling the amount of urea - Concentration, in realizing the control of the shape and thickness of the film, the thickness range of the indium hydroxide film produced in this embodiment is 4-30 μm, and at the same time, the shape and thickness of the indium hydroxide film can also be controlled by controlling the reflow time, The morphology of the thin ...

specific Embodiment approach 2

[0010] Embodiment 2: This embodiment differs from Embodiment 1 in that 1.7-1.9 g of urea, 1.4-1.6 g of indium nitrate and 120-145 mL of water are evenly mixed and placed in a container. Other steps and parameters are the same as those in Embodiment 1.

[0011] The thickness of the indium hydroxide thin film manufactured in this embodiment is 0.8-42 mm.

specific Embodiment approach 3

[0012] Embodiment 3: This embodiment is different from Embodiment 1 in that 1.8018 g of urea, 1.5278 g of indium nitrate and 140 mL of water are uniformly mixed and placed in a container. Other steps and parameters are the same as those in Embodiment 1.

[0013] The thickness of the indium hydroxide film produced in this embodiment is 19.3 μm.

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Abstract

The invention relates to a method of preparing catalytic material for the indium hydroxide thin film with controllable shape and thickness, belonging to the method of preparing the catalytic material and aiming at solving the problems that the prior method of preparing the semiconductor material of TiO2 used for the photocatalytic oxidation technology is complex, the prepared semiconductor material of TiO2 has low catalytic efficiency and the semiconductor material of TiO2 which adopts the powder is easy to cause secondary pollution during usage. The method of preparing the catalytic material for the indium hydroxide thin film comprises the following steps: mixing evenly urea, indium nitrate and water, and adding the mixture to a reactor; placing a glass panel in the reactor; and placing the reactor to an oil bath pan to carry out reflux reaction to prepare the catalytic material for the indium hydroxide thin film. The method of preparing the catalytic material for the indium hydroxide thin film is easy, and the indium hydroxide thin film prepared with the method has high catalytic efficiency and can not cause secondary pollution during usage, thereby having wide application range.

Description

technical field [0001] The invention relates to a preparation method of a catalytic material. Background technique [0002] With the acceleration of modernization and urbanization and the improvement of people's living standards, the air quality of the living room environment and workplaces has increasingly become a hot issue that people generally pay attention to. The treatment methods of indoor air are mainly adsorption method, absorption method, zeolite membrane separation method, condensation method, photocatalytic method and low temperature plasma method, etc. Among them, the photocatalytic oxidation technology mainly uses the special electronic structure and photocatalytic properties of semiconductors. Compared with other treatment technologies, it has obvious advantages such as energy saving, high efficiency, and complete pollutant degradation. Moreover, photocatalytic technology is easy to operate and has no secondary pollution. Now it has become an indoor environme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/08B01J37/00B01J35/02A62D3/10A62D101/20
Inventor 李长玉刘守新康振辉仲鑫韩世岩
Owner NORTHEAST FORESTRY UNIVERSITY
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