Method for preparing ZnO nanowire suspended back gate field-effect transistor

Abstract

The invention discloses a method for preparing a ZnO nanowire suspended back gate field-effect transistor, comprising the following steps: preparing high-doped P + + substrate; evaporating a layer of SiO2 on the front of the high-doped P + + substrate to form gate oxide; adopting an HF wet method to corrode the oxide layer of the back of the high-doped P + + substrate, and forming grids on back gold; photoetching and evaporating source and drain metal electrodes on the gate oxide; adopting an ethanol hydrolysis ultrasound method to strip a ZnO nanowire from the upper surface of an intrinsic glass substrate; randomly dropping the stripped single-ZnO nanowire on the source and drain metal electrodes of a P-Si substrate for positioning, using the ZnO nanowires as the channels of the field-effect transistor to bond the source and drain metal electrodes, and forming the ZnO nanowire suspended back gate field-effect transistor. The method has the advantages of obvious effect, simple and easy process, economy and strong reliability, and is easily adopted and promoted in the preparation of microwave, millimeter wave compound semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor devices, in particular to a method for preparing a ZnO nanowire-suspended back gate field effect transistor. Background technique [0002] Nanowires (including nanotubes) are one of the most advanced topics in nanotechnology and condensed matter physics research. They have superior physical properties and are the structural units for constructing nanoscale components such as lasers, sensors, field-effect transistors, light-emitting diodes, logic circuits, spintronic devices, and quantum computers. Especially semiconductor nanowires, which can not only be used as basic building blocks, but also be used to connect various nanodevices. Through in-depth research on semiconductor nanowires, it is expected to prepare electronic, photon and spin information processing devices with complex functions on a single nanowire. [0003] In addition, a variety of composite nanomaterials can be sy...

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Problems solved by technology

At present, some foreign researchers are trying to make E / D NW FETs in order to realize their application in logic circuits, but no breakthrough results have been achieved.

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