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Preparing method of PZT thin films

A film and sol technology, applied in the field of PZT film preparation, can solve the problems of film unevenness, affecting the electrical properties of PZT film, particle aggregation, etc.

Inactive Publication Date: 2010-06-30
NANTONG XINYING DESIGN SERVICE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the sol-gel method has the lowest cost and is suitable for large-area film formation. However, when the sol-gel method is spin-coated with a homogenizer to form a film, particles tend to aggregate on the surface of the film, resulting in uneven film, which affects the PZT film. The electrical properties of

Method used

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Embodiment Construction

[0006] The invention provides a kind of preparation method of PZT film, at first prepare used precursor solution, lead acetate, butyl titanate and zirconyl heptanoate are dissolved in ethylene glycol ethyl ether, wherein the concentration ratio of the four is 1.15: 0.5:0.5:4, then add a small amount of glacial acetic acid to catalyze the hydrolysis rate of the sol to obtain the PZT sol, and then use a homogenizer to spin the PZT sol on the silicon wafer for multiple times to form a film. The method is as follows: Spin the film on the glue leveling machine in a clean environment, firstly level the glue at a speed of 300r / min for 5s, so that the dropped PZT sol can evenly cover the entire surface of the silicon wafer before high-speed rotation, so that after high-speed spin coating The thin film has better uniformity, and then, spin the glue at a speed of 3000r / min for 20s, and use an iodine tungsten lamp to irradiate each time the glue is spin-coated. During the irradiation proc...

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PUM

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Abstract

The present invention provides a preparing method of PZT thin films. Firstly, used first body solution is prepared, lead acetate, butyl titanate and zirconyl heptylate are dissolved into glycol ether, and the hydrolytic speed of colloidal sol is controlled by ice acetic acid to obtain PZT colloidal sol; then, the PZT colloidal sol is spincoated on silicon chips by a gel machine, a halogen lamp is used for irradiating when the PZT colloidal sol is spincoated every time, and the PZT thin films of which the surfaces are flat and smooth and the thickness is even are obtained after spincoating in many times.

Description

technical field [0001] The invention relates to a preparation method of a PZT thin film. Background technique [0002] PZT (lead zirconate titanate) ceramic material is currently the most widely used and most researched ferroelectric material. PZT ceramic material has excellent pyroelectric, piezoelectric and ferroelectric properties, and is an ideal material for preparing devices such as pyroelectric infrared detectors, micro piezoelectric drivers, ferroelectric memories, and ferroelectric sonar transducers. Although the PZT ceramic material used as a bulk material has excellent electrical properties, it has high operating voltage and low frequency of use, and is not suitable for compatibility with semiconductor integrated circuit technology, so its application is limited to a certain extent. [0003] At present, PZT thin film has become the main direction of research. Compared with bulk materials, its advantages are small size, light weight, low working voltage, and compa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/491C04B35/472C04B35/622
Inventor 张炎
Owner NANTONG XINYING DESIGN SERVICE
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