Semiconductor-type gas sensor with A1N heat isolation panel double-side micro structure and manufacturing method thereof

A gas sensor and thermal isolation technology, applied in the field of sensing, can solve problems such as poor thermal conductivity, high process development costs, and complex processes, and achieve the effects of reducing heating power loss, low process development costs, and simple processes

Inactive Publication Date: 2010-06-30
HARBIN UNIV OF SCI & TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the disadvantages of poor thermal conductivity, high process development cost, and complicated process in the gas sensor of existing materials, the present invention proposes a semiconductor gas sensor with double-sided microstructure of AlN heat-isolated flat plate and its manufacturing method

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  • Semiconductor-type gas sensor with A1N heat isolation panel double-side micro structure and manufacturing method thereof
  • Semiconductor-type gas sensor with A1N heat isolation panel double-side micro structure and manufacturing method thereof
  • Semiconductor-type gas sensor with A1N heat isolation panel double-side micro structure and manufacturing method thereof

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specific Embodiment approach 1

[0023] Specific implementation mode 1. Combination figure 1 and figure 2 Description of this embodiment, AlN heat isolation plate double-sided microstructure semiconductor gas sensor, it includes AlN ceramic substrate 1, two heating electrodes 2, front heater 2-1, back heater 2-2, two signal Electrode 3, two signal acquisition pieces 3-1, sensitive film 4 and thermal isolation groove 5, are etched with thermal isolation groove 5 on four directions of the diagonal line of described AlN ceramic substrate 1, and thermal isolation groove 5 makes Four island protrusions 51 are respectively formed on the front and back of the AlN ceramic substrate 1, four through holes 1-1 are etched along the edges of the thermal isolation groove 5 in four directions, and the front of the AlN ceramic substrate 1 is provided with a heating electrode 2 , a front heater 2-1, a signal electrode 3 and a signal collecting sheet 3-1, the heating electrode 2 runs through the two through holes 1-1 on one ...

specific Embodiment approach 2

[0024] Specific embodiment two, combine figure 1 and figure 2This embodiment is described. The difference between this embodiment and the first embodiment is that the AlN ceramic substrate 1 is square.

specific Embodiment approach 3

[0025] Specific embodiment three, combine figure 1 and figure 2 Describe this embodiment, the difference between this embodiment and specific embodiment 1 or 2 is that the side length d of the AlN ceramic substrate 1 is 3.1-3.3 mm, and the distance between the outer boundaries of two adjacent through holes 1-1 l is 2.9-3.1mm, the island protrusions 5-1 formed by the thermal isolation groove 5 are four isosceles trapezoids, wherein every two opposite isosceles trapezoids are congruent, and a pair of island protrusions 5-1 are isosceles trapezoids The upper bottom n1 is 0.45-0.55mm, the lower bottom m1 is 1.35-1.45mm, the height h1 is 0.25-0.35mm, and the upper bottom n2 of another pair of island protrusions 51 isosceles trapezoid is 0.85-0.95mm, and the lower bottom m2 is 1.55-1.65mm, height h2 is 0.45-0.55mm, the length k of the serpentine arrangement structure of the rear heater 2-2 is 0.95-1.05mm, the spacing r is 0.045-0.055mm, and the length e of the sensitive film 4 is ...

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Abstract

A semiconductor-type gas sensor with an A1N heat isolation panel double-side micro structure and a manufacturing method thereof relate to a self-heat isolation panel double-side micro structural gas sensor and a manufacturing method thereof. The invention solves the problems that the existing Si-material gas sensor has high cost of process development, complex process and the like, and is characterized in that four positions of the diagonal line of a substrate are etched with heat isolation grooves; the back of the substrate is provided with heating electrodes and signal electrodes; the heating electrodes of the front and the back of the substrate are communicated by a through hole; the heating electrodes are arranged in a snakelike structure, and a sensitive film is attached on the signal electrode. The manufacturing method is as follows: 1. selecting the substrate; 2. preparing the Pt metal film signal electrode of the sensor: photoetching, coating film and stripping the metal film; 3. preparing the antarafacial heating electrodes: firstly, coating film, and then etching with laser; 4. isolating heat; 5. annealing; and 6. attaching the sensitive film. The invention can be used as a sensor for semiconductor-type C12, NOX, CO and the like.

Description

technical field [0001] The invention relates to the field of sensing technology, in particular to a self-heating isolation flat plate double-sided microstructure gas sensor and a manufacturing method thereof. Background technique [0002] At present, semiconductor gas sensors at home and abroad are mainly used to detect flammable gases and toxic gases, and play an increasingly important role in preventing poisoning and combustion explosions. In addition to gas sensitive components, semiconductor gas sensors must also be equipped with a heater , to heat the gas sensitive element to the required working temperature, currently the practical SnO 2 Inorganic semiconductor gas sensors such as ZnO-based and ZnO-based gas sensors generally need to be heated to 300°C to 500°C to have gas-sensing properties, and they all need to be mixed with noble metal catalysts to improve their sensitivity and selectivity. The performance of the component is greatly affected. Then an organic semi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/04B81B7/02B81C1/00
Inventor 施云波赵文杰周真修德斌冯侨华
Owner HARBIN UNIV OF SCI & TECH
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