Method for manufacturing photoelectric conversion device, and photoelectric conversion device
A technology for a photoelectric conversion device and a manufacturing method, which can be applied to energy conversion devices, photovoltaic power generation, and final product manufacturing, etc., can solve the problems of reduced film formation speed, reduced conversion efficiency, and deteriorated interface characteristics, and achieves improved interface characteristics and improved production. The effect of high performance and high conversion efficiency
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Embodiment 1
[0107] Used as a discharge electrode of RF plasma CVD equipment Figure 6 For the discharge electrodes shown, the distance d between the substrate and the discharge electrodes was set to 5 mm, 6 mm, 8 mm, 10 mm, and 12 mm, respectively.
[0108] To the n-layer film-forming chamber with a flow ratio of SiH 4 :H 2 :PH 3 =1:100:0.005 Raw material gas is supplied so that the film forming pressure is in the range of 200Pa to 1200Pa. Set the substrate temperature at 180°C, apply a frequency of 60MHz and 5kW to generate plasma, and produce it on a sodium float glass substrate (1.4m×1.1m×thickness: 4mm) with a film formation time of 120nm n-type silicon film.
[0109] With respect to the substrate after film formation, the film thickness at 189 points in the plane was measured using the spectropolarized light analysis method, and the average film thickness and film thickness distribution were measured. Here, the film thickness distribution is {(maximum value)−(minimum value)} / {2×...
Embodiment 2
[0115] As the discharge electrode of RF plasma CVD equipment, use Figure 6For the discharge electrode shown, change the distance d between the substrate and the discharge electrode within the range of 5 mm to 15 mm to make n layers. In Example 2, the film forming pressure was set to 700 Pa or 1000 Pa, and other film forming conditions and measurement conditions were the same as in Example 1.
[0116] Figure 10 It is a graph in which the horizontal axis represents the distance between substrate electrodes and the vertical axis represents the film formation rate. Figure 11 It is a graph in which the horizontal axis represents the distance between substrate electrodes and the vertical axis represents the film thickness distribution. Figure 12 It is a graph in which the horizontal axis represents the distance between substrate electrodes and the vertical axis represents the Raman ratio.
[0117] When the distance between the substrate electrodes is set to be 6 mm or more an...
Embodiment 3
[0120] A solar cell module is produced by the steps described in the first embodiment. The conditions for forming the p layer, i layer, and n layer as the photoelectric conversion layer, and the back electrode layer are as follows.
[0121] To the p-layer film-forming chamber with a flow ratio of SiH 4 :H 2 :B 2 h 6 (The concentration of hydrogen groups is 0.5%): CH 4 =0.2:4.8:0.8:1.0 Raw material gas was supplied, and the film forming pressure was 140Pa. The substrate temperature was set to 200°C. Plasma was generated by applying a high frequency of 60 MHz and 5 kW, and a p-type amorphous silicon film with a film thickness of 8 nm was formed as a p layer. Thereafter, a buffer layer having a film thickness of 5 nm was formed.
[0122] To the i-layer film-forming chamber, the flow ratio SiH 4 :H 2 = 1:3 supply of raw material gas, film formation pressure is 200Pa. The substrate temperature was set at 220° C., a high frequency of 60 MHz and 5 kW was applied to generate...
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